On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices

Mura, Giovanna; Vanzi, Massimo; Stangoni, Maria; Ciappa, Mauro; Fichtner, W.

doi:10.1016/s0026-2714(03)00298-1

Cited by 8 publications

(10 citation statements)

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“…The etching stops at the boron diffused layer, leaving a thin 2-µm thick membrane (i). At this point the gold layer has served its purpose and is removed by gold etching solution (Mura et al ., 2003) (j). Polymethyl methacrylate (PMMA) is spin coated on the chip and patterned by E-beam lithography.…”

Section: Methodsmentioning

confidence: 99%

Bilayer lipid membrane (BLM) based ion selective electrodes at the meso-, micro-, and nano-scales

Liu

Rieck

Wie

et al. 2009

Biosensors and Bioelectronics

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This paper presents a novel method for making micron-sized apertures with tapered sidewalls and nano-sized apertures. Their use in bilayer lipid membrane-based ion selective electrode design is demonstrated and compared to mesoscale bilayers and traditional PVC ion selective electrodes. Micron-sized apertures are fabricated in SU-8 photoresist films and vary in diameter from 10 to 40 microns. The tapered edges in SU-8 films are desired to enhance bilayer lipid membrane (BLM) formation and are fabricated by UV-light overexposure. Nanoapertures are made in boron diffused silicon film. The membranes are used as septa to separate two potassium chloride solutions of different concentrations. Lecithin BLMs are assembled on the apertures by ejecting lipid solution. Potassium ionophore, dibenzo-18-crown-6, is incorporated into BLMs by dissolving it in the lipid solution before membrane assembly. Voltage changes with increasing potassium ion concentrations are recorded with an A/D converter. Various ionophore concentrations in BLMs are investigated. At least a 1% concentration is needed for consistent slopes. Electrode response curves are linear over the 10−6 to 0.1 M range with a sub-Nernstian slope of 20 mV per Log concentration change. This system shows high selectivity to potassium ions over potential interfering sodium ions. BLMs on the three different aperture sizes at the meso, micro, and nano-scales all show similar linear ranges and limits of detection (LODs) as PVC ion selective membranes.

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Section: Methodsmentioning

confidence: 99%

Bilayer lipid membrane (BLM) based ion selective electrodes at the meso-, micro-, and nano-scales

Liu

Rieck

Wie

et al. 2009

Biosensors and Bioelectronics

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“…Table 3 summarises the relative advantages and disadvantages associated with dry and wet etching. As well as its use in device fabrication, wet etching is an important technique in the failure analysis of microelectronic components [32] and also in the recovery/recycling of gold from scrap electronic products [33]. Etching solutions for gold contain two essential components [34].…”

Section: Wet Etchingmentioning

confidence: 99%

“…The most commonly used etchant for patterning gold is undoubtedly the iodine-iodide system [7,32,34,48,50]. This is typically formulated from KI or NaI salts and I 2 [34,50].…”

Section: Aqueous Etchantsmentioning

confidence: 99%

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Gold etching for microfabrication

2014

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The etching of gold is a key enabling technology in the fabrication of many microdevices and is widely used in the electronic, optoelectronic and microelectromechanical systems (MEMS) industries. In this review, we examine some of the available methods for patterning gold thin films using dry and wet etching techniques. Dry methods which utilise reactive ion etching (RIE) have a number of important advantages over other methods, but the low volatility of gold etch products has made the development of suitable processes problematic. More recently, the adoption of high-density plasma reactors with optimised chlorine-based chemistries has allowed improved processes to be developed, and etching in hydrogen plasmas also shows promise. Wet etching methods for gold have also been critically reviewed. Traditionally, iodine-and cyanide-based etch processes have been used, but in the last decade, a number of alternative etchants have been studied. Of particular interest is the recent development of a range of novel nonaqueous-based gold etchants, and the suitability of these etchants for microfabrication is assessed.

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“…Three subsequent wet etches are administered at this stage (Fig. 1(e)), and it is the second, an iodine-based gold etch, 17 that ultimately sets the wrap-gate length. The first is a 30 s etch in BHF at room temperature to strip back the outer Al 2 O 3 layer, exposing the wrap-gate.…”

mentioning

confidence: 99%

Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography

et al. 2011

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An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the subthreshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 and 4 K, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.

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On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices

Cited by 8 publications

References 0 publications

Bilayer lipid membrane (BLM) based ion selective electrodes at the meso-, micro-, and nano-scales

Bilayer lipid membrane (BLM) based ion selective electrodes at the meso-, micro-, and nano-scales

Gold etching for microfabrication

Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography

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