This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 μm CMOS (complementary metal-oxide-semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0-300 kPa.
Micro-and nanoresonator sensors have important applications such as in chemical and biological sensing, environmental control, monitoring of viscosity and magnetic fields, and inertial forces detection. However, most of these resonators are designed as complex structures that complicate the estimation of their resonant frequencies (generally of the bending or torsional mode). In this paper, we present an analytical model to estimate the resonant frequency of the first bending mode of micro-and nanoresonators based on a beam system under different load types. This system is constructed of beams with different cross sections joined through a series-parallel arrangement. The analytical model is derived using the Rayleigh and Macaulay methods, as well as the Euler-Bernoulli beam theory. In addition, we determined the deflection function of the beam system, which can be used to establish its bending structural response under several load types. We applied the model to both a silicon microresonator (with a thickness of 5 m) for an experimental magnetic field sensor developed in our laboratory and for a polycrystalline silicon nanoresonator (with a thickness of 160 nm) of a mass sensor reported in the literature. The results of our analytical model have a comparable agreement with those obtained from the finite-element models (FEMs) and with the experimental measurements. Our analytical model can be useful in the mechanical design of microand nanoresonators with complex structural configurations.
This paper presents three MEMS platforms that exhibit multiple thermal sensitivities and multi-frequency capabilities. Multiple sensors with a variety of operating frequencies and thermal sensitivities can co-exist in the same device wafer. Aluminum nitride is the active layer of the three platforms. The impact of stack and substrate modifications on the performance of test devices is discussed as well. To test the platforms’ performance, temperature sensors are realized using Lamb-acoustic-wave micro-electro-mechanical (MEMS) resonators, each one featuring a different thermal coefficient of frequency that scales with frequency. Resonators designed for frequencies between 200 MHz to 1.5 GHz operate at their first symmetric mode (S0) and feature first-order TCFs in the range from −12 up to −30 ppm °C−1 depending on the frequency and design. Furthermore, TCFs of devices can be tailored to get smaller values through process variations. The platforms exhibit high electromechanical performance, with quality factors in excess of 1500 and maximum effective coupling coefficient of 6.43% for radio frequency (RF) applications above 1 GHz.
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