This paper presents an evaluation of the impact of 60 MeV Proton radiation on triple gate Bulk FinFETs, for both n and p types. The main focus is intrinsic voltage gain, threshold voltage and the OFF region drain current. The narrow nFinFET devices present an unexpected degradation of the drain current in the off-state region, which shows that the radiation affects severely the STI oxide resulting in a high parasitic conduction. The pFinFETs are more tolerant than the nFinFETs for environments that suffer from highenergy proton exposure.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.