Proton Radiation Effects on the Analog Performance of Bulk n- and p-FinFETs

Abstract

This paper presents an evaluation of the impact of 60 MeV Proton radiation on triple gate Bulk FinFETs, for both n and p types. The main focus is intrinsic voltage gain, threshold voltage and the OFF region drain current. The narrow nFinFET devices present an unexpected degradation of the drain current in the off-state region, which shows that the radiation affects severely the STI oxide resulting in a high parasitic conduction. The pFinFETs are more tolerant than the nFinFETs for environments that suffer from highenergy proton exposure.

Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

“…Besides the conventional SOI response to the radiation, it is also important to keep in mind how the ionizing radiation affects the triple-gate FinFET structures [11]. On bulk FinFETs the charge buildup in the STI (shallow trench isolation) oxide degrades the transistor behavior because it allows a parasitic current flow, which becomes a big problem as the fin width becomes narrow [12].…”