The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.
Quantum information technology strongly relies on the coupling of optical photons with narrowband quantum systems, such as quantum dots, color centers, and atomic systems. This coupling requires matching the optical wavelength and bandwidth to the desired system, which presents a considerable problem for most available sources of quantum light. Here we demonstrate the coupling of alkali dipole transitions with a tunable source of photon pairs. Our source is based on spontaneous parametric downconversion in a triply resonant whispering gallery mode resonator. For this, we have developed novel wavelength-tuning mechanisms that allow a coarse tuning to either the cesium or rubidium wavelength, with subsequent continuous fine-tuning to the desired transition. As a demonstration of the functionality of the source, we performed a heralded single-photon measurement of the atomic decay. We present a major advance in controlling the spontaneous downconversion process, which makes our bright source of heralded single photons now compatible with a plethora of narrowband resonant systems. (C) 2015 Optical Society of Americ
The self-catalyzed growth of vertically aligned and hexagonally shaped GaN micro- and nanorods on graphene transferred onto sapphire is achieved through metal organic vapor phase epitaxy. However, a great influence of the underlying substrate is evident, since vertically aligned structures with a regular shape could not be grown on graphene transferred to SiO2. The optical properties of the regular GaN nanorods were investigated by spatially and spectrally resolved cathodoluminescence showing defect related emission only near the interface between the sapphire substrate and nanorods but not from their upper part. Micro-raman spectroscopy confirms that the single-layer graphene remains virtually unchanged in terms of the Raman signal, even after undergoing high temperatures (similar to 1200 degrees C) during nanorod growth. Furthermore, Raman mapping demonstrates that GaN structures predominantly grow on defective parts of graphene, giving new insight into the nucleation and growth mechanism of semiconductors on graphene. To validate the conductivity of graphene, when being attached to the sapphire substrate and after the nanorod growth, current voltage investigations were carried out on single, as-grown, GaN nanorods with a nanoprober in a scanning electron microscope. These measurements demonstrate the viability of graphene as a conductive electrode, for example, as a back contact for GaN nanorods grown on insulating sapphire
The commercialization of solar fuel devices requires the development of novel engineered photoelectrodes for water splitting applications which are based on redundant, cheap, and environmentally friendly materials. In the current study, a combination of titanium dioxide (TiO2) and zinc oxide (ZnO) onto nanotextured silicon is utilized for a composite electrode with the aim to overcome the individual shortcomings of the respective materials. The properties of conformal coverage of TiO2 and ZnO layers are designed on the atomic scale by the atomic layer deposition technique. The resulting photoanode shows not only promising stability but also nine times higher photocurrents than an equivalent photoanode with a pure TiO2 encapsulation onto the nanostructured silicon. Density functional theory calculations indicate that segregation of TiO2 at the ZnO surfaces is favorable and leads to the stabilization of the ZnO layers in water environments. In conclusion, the novel designed composite material constitutes a promising base for a stable and effective photoanode for the water oxidation reaction.
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