Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

Heilmann, Martin; Munshi, A. Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar Tonaas; Helvoort, Antonius T. J. van; Yang, Jianfeng; Latzel, Michael; Hoffmann, B.; Conibeer, Gavin; Weman, H.; Christiansen, Silke

doi:10.1021/acs.nanolett.6b00484

Cited by 79 publications

(85 citation statements)

References 60 publications

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“…The representative SEM aerial view of AlN was shown in figure 1(b). The AlN grown along the C axis with similar height exhibited a pyramidal tip, indicating Al-polarity [19,20]. The values of the diameter and the height are estimated to be 520±100 nm and 5.2±0.2 μm, both of which conform to the normal distribution, as shown in figures 1(c)-(d) respectively.…”

Section: Resultsmentioning

confidence: 66%

Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy

Xiong

Zheng

et al. 2020

Mater. Res. Express

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The crystalline quality of traditional epitaxy is hampered by the lattice and thermal mismatch of epilayer and substrate. Van der Waals epitaxy (vdWE) allows the epilayer to show no excessive strain and results in low defects density. Here, the multilayer graphene as a substrate for c-axis-oriented growth of vertically aligned AlN nanorods by vdWE have been presented. Defect-free of the AlN nanorods was evidenced through transmission electron microscopy (TEM). The strain of AlN nanorods was reduced with the exponential of height, which was characterized by micro-Raman spectroscopy. Moreover, the temperature dependence of Raman scattering of AlN has been further studied for clarifying the relationship of optical phonons and temperature. This temperature dependence was well matched by an empirical relationship which has proved to be applicable for other III-Nitride (such as GaN, InN) semiconductors.

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Section: Resultsmentioning

confidence: 66%

Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy

Xiong

Zheng

et al. 2020

Mater. Res. Express

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“…If the interactions between the substrate and epilayer linked by the 2D buffer layer are well controlled, the orientation effect of the Si(100) substrate can be screened. Moreover, the 2D materials with hexagonal crystal structure, such as graphene and hexagonal boron nitride (BN), may guide the growth of wurtzite GaN, even the nucleation on graphene is still challenging.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Feng

Yang

Zhang

et al. 2019

Adv Funct Materials

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Fabricating single-crystalline gallium nitride (GaN)-based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal-oxide-semiconductor circuits, is a prerequisite for next-generation high-performance electronics and optoelectronics. However, the direct epitaxy of single-crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two-domain structure. Here, by utilizing singlecrystalline graphene as a buffer layer, the epitaxy of a single-crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH 3 can generate sp 3 CN bonds, which then triggers the nucleation of nitrides. The one-atom-thick single-crystalline graphene provides an in-plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first-principle calculations. This work lays the foundation for the integration of GaN-based devices into Si-based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.

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“…Sung et al employed graphene directly grown on silicon or sapphire substrate as a platform for the growth and lift-off of GaN-based light-emitting diode epitaxial layers, which is useful for not only recycling the substrate but also transferring the epitaxial layer to other flexible substrates [15]. Heilmann et al presented single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanoscale AlGaN nucleation islands [16]. Despite the growing interests in the heteroepitaxy of GaN films on graphene, there have been limited studies aimed at understanding the initial nucleation process.…”

Section: Introductionmentioning

confidence: 99%

Strain Effects in Gallium Nitride Adsorption on Defective and Doped Graphene: First-Principles Calculations

Yan

Gan

et al. 2018

Crystals

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Transferable, low-stress gallium nitride grown on graphene for flexible lighting or display applications may enable next-generation optoelectronic devices. However, the growth of gallium nitride on graphene is challenging. In this study, the adsorptions of initial nucleation process of gallium nitride on graphene were investigated using first-principles calculations based on density functional theory. The adsorption energies and the role of in-plane strains were calculated for different possible configurations of the adatoms on the surfaces of vacancy defect and doped graphene. Compared with the results of the gallium adatom, adsorption of the nitrogen atom on graphene was found to exhibit greater stability. The calculations reveal that the vacancy defect core enhanced the adsorption stability of the adatom on graphene, whereas the incorporation of oxygen impurity greatly reduced the stable adsorption of the gallium and nitrogen adatoms. Furthermore, the calculations of strain showed that the lattice expansion led to increased stability for all adsorption sites and configuration surfaces, except for the nitrogen adatom adsorbed over the gallium atom in Ga-doped graphene. The study presented in this paper may have important implications in understanding gallium nitride growth on graphene.

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Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

Cited by 79 publications

References 60 publications

Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy

Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Strain Effects in Gallium Nitride Adsorption on Defective and Doped Graphene: First-Principles Calculations

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