The creation of pseudo-magnetic fields in strained graphene has emerged as a promising route to investigate intriguing physical phenomena that would be unattainable with laboratory superconducting magnets. The giant pseudo-magnetic fields observed in highly deformed graphene can substantially alter the optical properties of graphene beyond a level that can be feasible with an external magnetic field, but the experimental signatures of the influence of such pseudo-magnetic fields have yet to be unveiled. Here, using time-resolved infrared pump-probe spectroscopy, we provide unambiguous evidence for slow carrier dynamics enabled by the pseudo-magnetic fields in periodically strained graphene. Strong pseudo-magnetic fields of ~100 T created by non-uniform strain in graphene on nanopillars are found to significantly decelerate the relaxation processes of hot carriers by more than an order of magnitude. Our findings offer alternative opportunities to harness the properties of graphene enabled by pseudo-magnetic fields for optoelectronics and condensed matter physics.
Despite its advantages of scalable process and cost-effectiveness, nanoimprinting faces challenges with imprinting hard materials (e.g., crystalline metals) at low/room temperatures, and with fabricating complex nanostructures rapidly (e.g., heterojunctions of metal and oxide). Herein, we report a room temperature ultrasonic nanoimprinting technique (named nanojackhammer) to address these challenges. Nanojackhammer capitalizes on the concentration of ultrasonic energy flow at nanoscale to shape bulk materials into nanostructures. Working at room temperature, nanojackhammer allows rapid fabrication of complex multi-compositional nanostructures made of virtually all solid materials regardless of their ductility, hardness, reactivity and melting points. Atomistic simulations reveal a unique alternating dislocation generation and recovery mechanism that significantly reduces the imprinting force under ultrasonic cyclic loading. As a proof-of-concept, a metal-oxide-metal plasmonic nanostructure with built-in nanogap is rapidly fabricated and employed for biosensing. As a fast, scalable, and cost-effective nanotechnology, nanojackhammer will enable various unique applications of complex nanostructures in optoelectronics, biosensing, catalysis and beyond.
Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including infrared imaging and optical communications. While there exist 2D materials with a narrow bandgap sensitive to infrared photons, a two-photon absorption (TPA) process can also enable infrared photodetection in well-established 2D materials with large bandgaps such as WSe2 and MoS2. However, most of the TPA photodetectors suffer from low responsivity, preventing this method from being widely adopted for infrared photodetection. Herein, we experimentally demonstrate 2D materials-based TPA avalanche photodiodes achieving an ultrahigh responsivity. The WSe2/MoS2 heterostructure absorbs infrared photons with an energy smaller than the material bandgaps via a low-efficiency TPA process. The significant avalanche effect with a gain of ∼1300 improves the responsivity, resulting in the record-high responsivity of 88 μA/W. We believe that this work paves the way toward building practical and high-efficiency 2D materials-based infrared photodetectors.
Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes Young Keun Lee, Hyosun Lee, Changhwan Lee et al. Advances in graphene-based optoelectronics, plasmonics and photonics Bich Ha Nguyen and Van Hieu Nguyen Photoresponse Enhancement in Graphene/Silicon Infrared Detector by Controlling Photocarrier Collection Xin Tang, Hengkai Zhang, Xiaobing Tang et al. Amplification of hot electron flow by the surface plasmon effect on metal-insulator-metal nanodiodes Changhwan Lee, Ievgen I Nedrygailov, Young Keun Lee et al. Light-matter interaction of 2D materials: Physics and device applicationsHot electrons excited by plasmon resonance in nanostructure can be employed to enhance the properties of photodetectors, even when the photon energy is lower than the bandgap of the semiconductor. However, current research has seldom considered how to realize the efficient collection of hot electrons, which restricts the responsivity of the device. In this paper, a type of plasmonic photodetector based on asymmetric nanogap electrodes is proposed. Owing to this structure, the device achieves responsivities as high as 0.45 and 0.25 mA/W for wavelengths of 1310 and 1550 nm, respectively. These insights can aid the realization of efficient plasmon-enhanced photodetectors for infrared detection.
Strained germanium nanowires have recently become an important material of choice for silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium had long been problematic both in light absorption and emission, recent successful demonstrations of bandstructure engineering by elastic strain have opened up the possibility of achieving direct bandgap in germanium, paving the way towards the realization of various high-performance optical devices integrated on a silicon platform. In particular, the latest demonstration of a low-threshold optically pumped laser in a highly strained germanium nanowire is expected to vitalize the field of silicon photonics further. Here, we review recent advances and challenges in strained germanium nanowires for optoelectronic applications such as photodetectors and lasers. We firstly introduce the theoretical foundation behind strained germanium nanowire optoelectronics. And several practical approaches that have been proposed to apply tensile strain in germanium nanowires are further discussed. Then we address the latest progress in the developments of strained germanium nanowire optoelectronic devices. Finally, we discuss the implications of these experimental achievements and the future outlook in this promising research field.
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