Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene

Kang, Dongho; Sun, Hao; Luo, Manlin; Lu, Kunze; Chen, Melvina; Kim, Youngmin; Jung, Yongduck; Gao, Xuejiao J.; Parluhutan, Samuel Jior; Ge, Junyu; Koh, See Wee; Giovanni, David; Sum, Tze Chien; Wang, Qi Jie; Li, Hong; Nam, Donguk

doi:10.1038/s41467-021-25304-0

Cited by 35 publications

(21 citation statements)

References 61 publications

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“…We believe our coherent model of PC from graphene in the quantum Hall regime will further the development of applications using graphene such as single-photon detection [46][47][48] and light-harvesting [49,50], as an electrically-measured CM has been longcoveted [25]. The quantum Hall regime can be realized with a synthetic gauge field [51]. Our findings will also fa-cilitate exploring new physics such as studies of twistronics [52], topological properties of quantum devices [53] and controlling the CM [54].…”

Section: Discussionmentioning

confidence: 67%

Chiral transport of hot carriers in graphene in the quantum Hall regime

Cao¹,

Graß²,

Gazzano³

et al. 2021

Preprint

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Section: Discussionmentioning

confidence: 67%

Chiral transport of hot carriers in graphene in the quantum Hall regime

Cao¹,

Graß²,

Gazzano³

et al. 2021

Preprint

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“…We believe our coherent model of PC from graphene in the quantum Hall regime will push the development of applications using graphene such as single-photon detection − and light harvesting, , as an electrically measured CM has been long-coveted . Novel quantum Hall regimes, with modified optical properties, can be realized with a giant synthetic gauge field . Our findings will also facilitate exploring additional physics such as studies of twistronics .…”

Section: Discussionmentioning

confidence: 79%

Chiral Transport of Hot Carriers in Graphene in the Quantum Hall Regime

et al. 2022

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Photocurrent (PC) measurements can reveal the relaxation dynamics of photoexcited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. Here, we study the relaxation of carriers in graphene in the quantum Hall regime by accurately measuring the PC signal and modeling the data using optical Bloch equations. Our results lead to a unified understanding of the relaxation processes in graphene over different magnetic field strength regimes, which is governed by the interplay of Coulomb interactions and interactions with acoustic and optical phonons. Our data provide clear indications of a sizable carrier multiplication. Moreover, the oscillation pattern and the saturation behavior of PC are manifestations of not only the chiral transport properties of carriers in the quantum Hall regime but also the chirality change at the Dirac point, a characteristic feature of a relativistic quantum Hall effect.

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“…The characterizations of the interaction between strain and properties are also revealed by several techniques. For example, the characterization of band gap change can be performed by the photoluminescence (PL) and cathodoluminescence (CL); the phonon vibration determines the thermal properties, which can be revealed by Raman; infrared pump–probe spectroscopy is used for pseudomagnetic field characterization in strained graphene, , and so on. The third pillar is to apply and measure the strain in the crystal materials, which is limited by difficulties in manipulating atomically thick 2D materials.…”

Section: Ese/dese Of Monolayer 2d Materialsmentioning

confidence: 99%

Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers

Han

Gao

Zhou

et al. 2022

ACS Appl. Mater. Interfaces

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Conventionally, tuning materials’ properties can be done through strategies such as alloying, doping, defect engineering, and phase engineering, while in fact mechanical straining can be another effective approach. In particular, elastic strain engineering (ESE), unlike conventional strain engineering mainly based on epitaxial growth, allows for continuous and reversible modulation of material properties by mechanical loading/unloading. The exceptional intrinsic mechanical properties (including elasticity and strength) of two-dimensional (2D) materials make them naturally attractive candidates for potential ESE applications. Here, we demonstrated that using the strain effect to modulate the physical and chemical properties toward novel functional device applications, which could be a general strategy for various 2D materials and their heterostructures. We then show how ultralarge, uniform elastic strain in free-standing 2D monolayers can permit deep elastic strain engineering (DESE), which can result in fundamentally changed electronic and optoelectronic properties for unconventional device applications. In addition to monolayers and van der Waals (vdW) heterostructures, we propose that DESE can be also applied to twisted bilayer graphene and other emerging twisted vdW structures, allowing for unprecedented functional 2D material applications.

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Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene

Cited by 35 publications

References 61 publications

Chiral transport of hot carriers in graphene in the quantum Hall regime

Chiral transport of hot carriers in graphene in the quantum Hall regime

Chiral Transport of Hot Carriers in Graphene in the Quantum Hall Regime

Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers

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