2022
DOI: 10.1021/acsnano.2c05502
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Chiral Transport of Hot Carriers in Graphene in the Quantum Hall Regime

Abstract: Photocurrent (PC) measurements can reveal the relaxation dynamics of photoexcited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. Here, we study the relaxation of carriers in graphene in the quantum Hall regime by accurately measuring the PC signal and modeling the data using optical Bloch equations. Our results lead to a unified understanding of the relaxation processes in graphene over different magnetic field strength regimes, whi… Show more

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Cited by 4 publications
(3 citation statements)
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“…Complete details of the fabrication are given in the Methods section based on our previous work. [14,35] In short, the fabrication of such a device started with the assembly of an hBN/graphene/hBN stack onto a SiO 2 /Si substrate using a hot pick-up technique (Figure 1(a)). [34] The 1D edges of graphene were exposed on all four sides of the stack, after the stack was shaped in rectangular form by reactiveion etching (RIE) using a hard mask (Figure 1(b)).…”
Section: Resultsmentioning
confidence: 99%
“…Complete details of the fabrication are given in the Methods section based on our previous work. [14,35] In short, the fabrication of such a device started with the assembly of an hBN/graphene/hBN stack onto a SiO 2 /Si substrate using a hot pick-up technique (Figure 1(a)). [34] The 1D edges of graphene were exposed on all four sides of the stack, after the stack was shaped in rectangular form by reactiveion etching (RIE) using a hard mask (Figure 1(b)).…”
Section: Resultsmentioning
confidence: 99%
“…Complete details of the fabrication are given in the Methods section based on our previous work. 14,35 In short, the fabrication of such a device started with the assembly of an hBN/graphene/hBN stack onto a SiO2/Si substrate using a hot pick-up technique (Figure 1(a)). 34 The 1D edges of graphene were exposed on all four sides of the stack, after the stack was shaped in rectangular form by reactiveion etching (RIE) using a hard mask (Figure 1(b)).…”
Section: Resultsmentioning
confidence: 99%
“…Complete details of the fabrication are given in the Methods section based on our previous work. 14,25 In short, the fabrication of such a device started with the assembly of an hBN/graphene/hBN stack onto a SiO2/Si substrate using a hot pick-up technique (Figure 1(a)). 24 The 1D edges of graphene were exposed on all four sides of the stack, after the stack was shaped in rectangular form by reactive-ion etching (RIE) using a hard mask (Figure 1(b)).…”
Section: Introductionmentioning
confidence: 99%