Articles you may be interested inInterfacial resistance and spin-dependent scattering in the current-perpendicular-to-plane giant magnetoresistance using Co2Fe(Al0.5Si0.5) Heusler alloy and Ag Magnetoresistance mobility extraction on Ti N ∕ Hf O 2 ∕ Si O 2 metal-oxide-semiconductor field effect transistors Appl. Phys. Lett. 90, 152111 (2007); 10.1063/1.2721363 Deposition of [Ni-Fe/Al-O/Co-Fe] films with tunneling magnetoresistance effect using the interfacial modulation techniqueHuge magnetoresistive effects were observed in a metal/insulator current-in-plane ͑CIP͒ diode feeding space charge limited ͑SCL͒ current. The insulator laterally toward opposite gold ͑Au͒ electrodes was fabricated on a SiO 2 substrate by the standard photolithography method using dry etching. The insulator consisted of a SiO 2 / ZnO / SiO 2 / ZnO multilayer sputtered on the substrate. Current-voltage curves showed Ohmic property and SCL current characteristics accompanied by Child-Langmuir and Mott-Gurney laws derived from first order differential calculus. Current-magnetic field curves indicated the huge magnetoresistive effects up to 10 10 % under the magnetic field of 0.3 T at room temperature. The current-magnetic field curves have even symmetry for the applied magnetic field. The Au/insulator CIP diode is abruptly switched between a conducting state and an insulating state by the applied magnetic field.

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In this paper, we show a monolithically fabricated hybrid head with a GaAs-based laser diode capable of near-field-assisted magnetic recording. A bottlenecked conductor was placed beside the laser cavity formed on the trailing side of the head. The bottlenecked structure is used as a generator of magnetic and near fields. The structure consists of a couple of opposite electrodes with a 200-nm gap and a bridge connection between the electrodes. The magnetic field is mainly generated around the bottleneck by feeding current through the conductor. The near field is produced along edges of the bottleneck by irradiating a laser beam. We confirmed the 3-D localization of near field in the nanometer size around the bottleneck by means of a near-field scanning optical microscope. We attained the nanosized overlap between magnetic filed and near-field distributions on the hybrid head with the laser diode.Index Terms-Hybrid head, laser diode, near-field-assisted magnetic recording, near-field scanning optical microscope (NSOM).

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