25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 2003
DOI: 10.1109/gaas.2003.1252400
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60GHz-band low noise amplifier and power amplifier using InGaP/GaAs HBT technology

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Cited by 9 publications
(2 citation statements)
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“…Millimeter wave MMICs of such applications have been fabricated through a III-V compound based technology related to active devices such as GaAs-based HEMT, InP-based HEMT and InP-based HBT [2]. p-HEMT devices are especially widely utilized as active devices of millimeter wave MMICs due to their excellent and stable RF performace [3]. The gate shape of the p-HEMT device has a major effect on parasitic capacitances, including the gate-to-…”
mentioning
confidence: 99%
“…Millimeter wave MMICs of such applications have been fabricated through a III-V compound based technology related to active devices such as GaAs-based HEMT, InP-based HEMT and InP-based HBT [2]. p-HEMT devices are especially widely utilized as active devices of millimeter wave MMICs due to their excellent and stable RF performace [3]. The gate shape of the p-HEMT device has a major effect on parasitic capacitances, including the gate-to-…”
mentioning
confidence: 99%
“…Hence, SiGe is superior to Si CMOS. Moreover, InGaP/GaAs HBTs exhibit high f T and high break down voltage, simultaneously (6) . In this work, from a performance point of view, we adopted InGaP/GaAs HBT technology.…”
mentioning
confidence: 99%