60GHz-band low noise amplifier and power amplifier using InGaP/GaAs HBT technology

Handa, Sayuri; Suematsu, E.; Tanaka, Hiroki; Motouchi, Y.; Yagura, M.; Yamada, Atsushi; Sato, H.

doi:10.1109/gaas.2003.1252400

Cited by 9 publications

(2 citation statements)

References 4 publications

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“…Millimeter wave MMICs of such applications have been fabricated through a III-V compound based technology related to active devices such as GaAs-based HEMT, InP-based HEMT and InP-based HBT [2]. p-HEMT devices are especially widely utilized as active devices of millimeter wave MMICs due to their excellent and stable RF performace [3]. The gate shape of the p-HEMT device has a major effect on parasitic capacitances, including the gate-to-…”

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confidence: 99%

Influence of Gate Head Dimensions on the Device performance of 0.12um PHEMT

Ahn

Lim

et al. 2007

2007 Asia-Pacific Microwave Conference

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In this paper, the fabrication technology of SiNassisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-band MMICs for high rate personal area network (WPAN) systems is described. The effect of the gate head dimension, such as the 1st-deck and the 2nd-deck gate head size, on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size are also presented. At the optimum gate head size, the p-HEMT device with two finger gates of 0.12um length and 50um width showed an extrinsic transconductance of 511mS/mm and a drain current of 20.6mA at 1.5V of drain voltage. The cut-off frequency and the maximum frequency of oscillation were 96.8GHz and 192.6GHz, respectively. Gate head dimensions of the p-HEMT device are correlated to parasitic capacitances, including Cgs, which effect the RF performance including a cut-off frequency (fT) and a maximum frequency of oscillation (fmax). I. INTRODUCTIONRecently, millimeter wave applications such as high speed wireless communications, collision avoidance car radar systems and millimeter wave video transmission systems have been developed. Especially, unlicensed 60GHz-bands are of growing interest for high rate personal area networks (WPAN) (IEEE 802. 15. 3) and high rate wireless local area networks (WLAN) [1]. Millimeter wave MMICs of such applications have been fabricated through a III-V compound based technology related to active devices such as GaAs-based HEMT, InP-based HEMT and InP-based HBT [2]. p-HEMT devices are especially widely utilized as active devices of millimeter wave MMICs due to their excellent and stable RF performace [3]. The gate shape of the p-HEMT device has a major effect on parasitic capacitances, including the gate-to-

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confidence: 99%

Influence of Gate Head Dimensions on the Device performance of 0.12um PHEMT

Ahn

Lim

et al. 2007

2007 Asia-Pacific Microwave Conference

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“…Hence, SiGe is superior to Si CMOS. Moreover, InGaP/GaAs HBTs exhibit high f T and high break down voltage, simultaneously (6) . In this work, from a performance point of view, we adopted InGaP/GaAs HBT technology.…”

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confidence: 99%

An Ultra-Wideband Amplifier MMIC for 3-10.6 GHz Wireless Applications with InGaP/GaAs HBT Technology

et al. 2007

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An ultra-wideband amplifier MMIC has been demonstrated for the Ultra-Wide-Band (UWB) standard with InGaP/GaAs Heterojunction Bipolar Transistor (HBT) technology. The fabricated MMIC chip size is only 0.53 mm by 0.93mm. The amplifier MMIC includes all matching circuits on the chip. This amplifier MMIC is applicable to both a UWB low noise amplifier and a UWB transmitter amplifier by changing the collector current. The operating bias currents are 15 mA for a low noise amplifier and 30 mA for a transmitter amplifier. The collector bias voltage is 3.0 V. The MMIC as a transmitter amplifier exhibits a gain of 16 +/-1 dB and a third-order intercept point at the input (IIP3) of 0 dBm with 6.0 and 6.01 GHz signals with equal amplitude level. As a low noise amplifier, the MMIC exhibits a noise figure of less than 3.7 dB from 3.1 to 10.6 GHz.Keywords : Ultrawideband Amplifier, InGaP/GaAs HBT, Low Noise Amplifier, MMIC, Transmitter amplifier IntroductionThe long term vision for Ultra-Wide-Band (UWB) products is to enable personal devices with integrated wireless connectivity. This requires 110, 200 and 480 Mbps at 10 m. One of the design challenges for the UWB system is the high operating frequencies (3.1-10.6 GHz) (1) . The UWB transceiver must have complexity similar to Bluetooth, in order to meet the stringent requirements of the IEEE 802.15.3a standard, even though it operates at a much higher bit rate. The low noise amplifier and transmitter power amplifier are the key components in addition to the fast switching PLL and the high bandwidth sampling rate A/D converter. The UWB spectral mask for indoor communication systems shows the maximum average output power is limited to -41.3 dBm (1) . Nevertheless the required linearity of the transmitter is far higher because peak power value is calculated to be about +2 dBm. Thus, high linearity is required of the transmitter amplifier. In the receiver, a total noise figure of about 7 dB is required (2) . Hence, less than 4 dB noise figure is required of the front-end low noise amplifier.Si CMOS devices are continuing scaling down. Using 0.18 µm CMOS technology, an amplifier which had a gain of 10.4 dB and a noise figure of 4.2 dB from 2.4 to 9.5 GHz frequency band was reported (3) . Moreover, an amplifier implemented in 0.13 µm CMOS technology exhibited a gain of 13 to 17 dB, a 3dB bandwidth of 8 GHz and 1 dB gain compression point of 3.5 dBm (4) . However, the dc consumption is really 100 mW, and 3-dB bandwidth is 8 GHz which is 2.6 GHz lower than that of UWB specification. Thus, current Si CMOS technologies are not sufficient to meet the technological requirements. In near future, it is expected that 90-65 nm CMOS technologies are available for microwave ICs. These CMOS technologies could have an f T of over 100 GHz with a breakdown voltage applicable to UWB transceivers. Thus, there are some possibilities that the CMOS technologies are used for UWB applications.A SiGe amplifier recently reported has a gain of 18 dB and a noise figure of 4.5 dB over the bandwidth from 3.1 ...

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Basic Principle of HBT

Gao

2015

Heterojunction Bipolar Transistors for Circuit Design

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60GHz-band low noise amplifier and power amplifier using InGaP/GaAs HBT technology

Cited by 9 publications

References 4 publications

Influence of Gate Head Dimensions on the Device performance of 0.12um PHEMT

Influence of Gate Head Dimensions on the Device performance of 0.12um PHEMT

An Ultra-Wideband Amplifier MMIC for 3-10.6 GHz Wireless Applications with InGaP/GaAs HBT Technology

Basic Principle of HBT

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