Abstract:In this paper, the fabrication technology of SiNassisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-band MMICs for high rate personal area network (WPAN) systems is described. The effect of the gate head dimension, such as the 1st-deck and the 2nd-deck gate head size, on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size are also presented. At the optimum gate head size, the p-HEMT device with two finger gates of 0.12um length and 50um widt… Show more
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