The operating limits of a transistor are conventionally determined by characterization of the curves that form the boundary of the safe operating area (SOA) in the twodimensional drain current-voltage plane [1, 2]. The shape of these SOA curves depends on parameters such as pulse time tpulse, ambient temperature Tamb and area of the transistor A [3,4]. Consequently, this way of characterizing the safe operating limits does not result in a single safe operating range for the transistor, but in many different curves that depend on operating conditions and transistor geometry.
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