Advanced BCD technology for automotive, audio and power applications

Wessels, Piet; Swanenberg, M.; Zwol, H. van; Krabbenborg, B.H.; Boezen, H.; Berkhout, Marco; Grakist, A.

doi:10.1016/j.sse.2007.01.019

Cited by 69 publications

(27 citation statements)

References 16 publications

(26 reference statements)

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“…A fully integrated wide-spectrum (350 nm < λ < 1270 nm) optical link in a commercial 0.14 µm SOI-CMOS technology [24] is demonstrated, which provides ∼ 100 V galvanic isolation. The link has three components: The light-emitter, the optical channel (waveguide) and the detector.…”

Section: Introductionmentioning

confidence: 99%

Monolithic optical link in silicon-on-insulator CMOS technology

et al. 2017

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Abstract:This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n + p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

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Section: Introductionmentioning

confidence: 99%

Monolithic optical link in silicon-on-insulator CMOS technology

et al. 2017

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“…A micrograph of the implemented chip in a 140 nm CMOS SOI technology is shown in Fig. 6(b) [13]. We will show that this driver circuit is robust to many physics issues related to the power dissipation and PVT variations of an AMLED.…”

Section: Amled Driver Circuit For An Optocouplermentioning

confidence: 91%

“…We conclude our work in section 7. Figure 1(a) shows a schematic cross section of an AMLED (not to scale) in a 140 nm SOI CMOS technology [13]. The Medium Trench Isolation (MTI) regions and Buried Oxide (BOX) layer isolate the high voltage at the AMLED from the CMOS circuitry and provide galvanic isolation from the receiver.…”

Section: Introductionmentioning

confidence: 99%

Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

Agarwal¹,

Dutta²,

Annema³

et al. 2017

Opt. Express

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This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant overlap with the responsivity of silicon photodiodes. This enables monolithic CMOS integration of optocouplers, for e.g. smart power applications requiring high data rate communication with a large galvanic isolation. To ensure a certain minimum number of photons per data pulse (or per bit), light emitting diode drivers must be robust against process, operating conditions and temperature variations of the light emitting diode. Combined with the avalanche mode light emitting diode's steep current-voltage curve at relatively high breakdown voltages, this conventionally results in high power consumption and significant heating. The presented transmitter circuit is intrinsically robust against these issues, thereby enabling low power operation.

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“…Whilst in some cases, the effects of EMI are no more than a minor irritant (e.g., the screen distortion caused by the use of a wireless emitting device near a TV), in others, they may be potentially lethal (e.g., the use of a cell phone onboard an aircraft). As a result, it is essential that the effects of EMI on common electronic components are thoroughly understood [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Accordingly, the present study considers the EMI response of a bistable multivibrator, a component with wide-ranging applications in the electronics field, including Ref.…”

Section: Introductionmentioning

confidence: 99%

Investigation Into Time- And Frequency-Domain Emi-Induced Noise in Bistable Multivibrator

Tsai¹

2010

PIER

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Abstract-Electromagnetic interference (EMI) has a negative effect upon the performance of circuit communication systems. The present study considers the case of EMI induced in a conducting wire, and derives equations to establish the effect of the EMI on a bistable multivibrator. The validity of the equations is verified experimentally. The results indicate that the degree of influence of the EMI on the bistable oscillator depends on the interference power, the interference frequency, the induced power, the output resistance of the circuit, and the parasitic capacitance. Moreover, it is shown that the harmonic noise increases with an increasing interference amplitude and frequency. The theoretical results are found to be in good agreement with the experimental data.

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Advanced BCD technology for automotive, audio and power applications

Cited by 69 publications

References 16 publications

Monolithic optical link in silicon-on-insulator CMOS technology

Monolithic optical link in silicon-on-insulator CMOS technology

Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

Investigation Into Time- And Frequency-Domain Emi-Induced Noise in Bistable Multivibrator

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