Abstract:Abstract:This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n + p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical cou… Show more
“…The measured spectrum (Fig 8(b)) is centered around the 1.12 µm wavelength corresponding to the Si bandgap (E g−Si =1.12 eV) with a full-width-halfmaximum (FWHM) ∼ 96 meV at 300 K. The observed FWHM is in excess of ∼1.8kT 43 because of light being emitted from silicon, an indirect band gap semiconductor where interaction with phonons during the radiative recombination process leads to the broadening of the EL-spectrum compared to that in direct band-gap semiconductors 44,45 . Both the peak wavelength and the FWHM are in good agreement when compared with standard p-n junctions in silicon 46 .…”
Section: Optical Measurementssupporting
confidence: 52%
“…This is so because I PD /I LED =η PD · η ext. · η LED , where η PD/ext./LED is the IQE of detection in the PD/extraction efficiency of light/IQE of the LED, respectively 46 . Out of the three efficiencies, only η LED is a function of I LED .…”
In this work, we study the charge carrier transport and electroluminescence (EL) in thin-film polycrystalline (poly-) GaN/c-Si heterojunction diodes realized using a plasma enhanced atomic layer deposition (PE-ALD) process. The fabricated poly-GaN/p-Si diode with a native oxide at the interface showed a rectifying behavior (I on /I off ratio ∼ 10 3 at ±3 V) with current-voltage characteristics reaching an ideality factor n of ∼ 5.17. The areal (J a ) and peripheral (J p ) components of the current density were extracted and their temperature dependencies were studied. The space charge limited current (SCLC) in the presence of traps is identified as the dominant carrier transport mechanism for J a in forward bias. An effective trap density of 4.6x10 17 /cm 3 at a trap energy level of 0.13 eV below the GaN conduction band minimum was estimated by analyzing J a . Other basic electrical properties of the material such as free carrier concentration, density of states in the conduction band, electron mobility and dielectric relaxation time were also determined from the current-voltage analysis in the SCLC regime. Further, infrared EL corresponding to the Si bandgap was observed from the fabricated diodes. The observed EL intensity from the GaN/p-Si heterojunction diode is ∼ 3 orders of magnitude higher as compared to the conventional Si only counterpart. The enhanced infrared light emission is attributed to the improved injector efficiency of the GaN/Si diode because of the wide bandgap of the poly-GaN layer and resulting band discontinuity at the GaN/Si interface.
“…The measured spectrum (Fig 8(b)) is centered around the 1.12 µm wavelength corresponding to the Si bandgap (E g−Si =1.12 eV) with a full-width-halfmaximum (FWHM) ∼ 96 meV at 300 K. The observed FWHM is in excess of ∼1.8kT 43 because of light being emitted from silicon, an indirect band gap semiconductor where interaction with phonons during the radiative recombination process leads to the broadening of the EL-spectrum compared to that in direct band-gap semiconductors 44,45 . Both the peak wavelength and the FWHM are in good agreement when compared with standard p-n junctions in silicon 46 .…”
Section: Optical Measurementssupporting
confidence: 52%
“…This is so because I PD /I LED =η PD · η ext. · η LED , where η PD/ext./LED is the IQE of detection in the PD/extraction efficiency of light/IQE of the LED, respectively 46 . Out of the three efficiencies, only η LED is a function of I LED .…”
In this work, we study the charge carrier transport and electroluminescence (EL) in thin-film polycrystalline (poly-) GaN/c-Si heterojunction diodes realized using a plasma enhanced atomic layer deposition (PE-ALD) process. The fabricated poly-GaN/p-Si diode with a native oxide at the interface showed a rectifying behavior (I on /I off ratio ∼ 10 3 at ±3 V) with current-voltage characteristics reaching an ideality factor n of ∼ 5.17. The areal (J a ) and peripheral (J p ) components of the current density were extracted and their temperature dependencies were studied. The space charge limited current (SCLC) in the presence of traps is identified as the dominant carrier transport mechanism for J a in forward bias. An effective trap density of 4.6x10 17 /cm 3 at a trap energy level of 0.13 eV below the GaN conduction band minimum was estimated by analyzing J a . Other basic electrical properties of the material such as free carrier concentration, density of states in the conduction band, electron mobility and dielectric relaxation time were also determined from the current-voltage analysis in the SCLC regime. Further, infrared EL corresponding to the Si bandgap was observed from the fabricated diodes. The observed EL intensity from the GaN/p-Si heterojunction diode is ∼ 3 orders of magnitude higher as compared to the conventional Si only counterpart. The enhanced infrared light emission is attributed to the improved injector efficiency of the GaN/Si diode because of the wide bandgap of the poly-GaN layer and resulting band discontinuity at the GaN/Si interface.
“…Therefore, we prefer to use an external optical source. We also notice the recent development in on-chip silicon light-emitting diodes (LEDs) [35], [36]. The wide spectrum of silicon LEDs could be a proper light source for applications like bio-sensing.…”
Reconfigurable photonic processors, which can be programmed to perform multiple photonic processing tasks by using the same hardware platform, own the advantages of higher flexibility and more cost-effectiveness compared with application-specific photonic integration circuits (ASPICs). In this paper, we present a novel programmable photonic processor based on two-dimensional meshes of self-coupled optical waveguide (SCOW) resonant structures. The proposed processor can be configured for realizing various basic optical components, as well as cascaded and coupled components. As a proof-of-principle, we experimentally demonstrate the concept with a 3 × 1 SCOW-based processor on the silicon platform, including tunable couplers, variable optical attenuators, and phase shifters. We implement eight different configurations using the chip, including ring resonators, Mach-Zehnder interferometers, Fabry-Perot resonators, and composite structures built of these basic components. These results demonstrate that the proposed processor can be a promising candidate for multi-functional photonic processors.
“…The measured spectrum (Fig 6.9(b)) is centered around the 1.12 µm wavelength corresponding to the Si bandgap (E g−Si =1.12 eV) with a full-width-half-maximum (FWHM) ∼ 96 meV at 300 K. The observed FWHM is in excess of ∼1.8kT [157] because of light being emitted from silicon, an indirect band gap semiconductor where interaction with phonons during the radiative recombination process leads to the broadening of the EL-spectrum compared to that in direct band-gap semiconductors [247,248]. Both the peak wavelength and the FWHM are in good agreement when compared with standard p-n junctions in silicon [249].…”
Section: Optical Measurementsmentioning
confidence: 66%
“…This is so because I PD /I LED =η PD • η ext. • η LED , where η PD/ext./LED is the IQE of detection in the PD/extraction efficiency of light/IQE of the LED, respectively [249]. Out of the three efficiencies, only η LED is a function of I LED .…”
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