Advanced 100V, 0.13 gm BCD process for next generation automotive applications

Wessels, Piet; Swanenberg, M.; Claes, J.; Ooms, E.R.

doi:10.1109/ispsd.2006.1666105

Cited by 12 publications

(8 citation statements)

References 4 publications

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“…Automotive is a typical application area that will benefit. The monolithic approach combines low costs solutions together with the extreme high quality levels that are typical requirements for the automotive industry [25]. A number of traditionally analogue functions are being redesigned into the digital domain (Fig.…”

Section: A-bcd9mentioning

confidence: 99%

Advanced BCD technology for automotive, audio and power applications

Wessels

Swanenberg

Zwol

et al. 2007

Solid-State Electronics

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Section: A-bcd9mentioning

confidence: 99%

Advanced BCD technology for automotive, audio and power applications

Wessels

Swanenberg

Zwol

et al. 2007

Solid-State Electronics

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“…Modem power integrated circuits for automotive electronics, power management and power amplification are based on advanced CMOS technology (180 nm and beyond [1,2]) with dedicated technology options for the high voltage and power transistors. Transistors with multiple breakdown voltages (BVDS) between 5 and 100 V, low specific onresistance (RON) and rugged safe-operating-area (SOA) are typically required.…”

Section: Introductionmentioning

confidence: 99%

“…The traditional approach such as e.g. used in ABCD technology [1] requires dedicated SOI wafers and extra process steps. A more CMOS compatible approach QW!-lr I BV = 50 V has also been suggested [3], but additional process steps are still required.…”

Section: Introductionmentioning

confidence: 99%

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Ultra-flexible, layout-enabled field plates for HV transistor integration in SOI-based CMOS

Šonský

Heringa

2007

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

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Field plates are commonly used to enhance the performance of high voltage devices and to improve the trade-off between breakdown voltage and specific on-resistance, but they typically require dedicated extra process steps. This paper presents a novel concept of field plate implementation in baseline SOI-CMOS by means of a smart layout without extra processing steps. Such layout-enabled field plates are experimentally demonstrated in a 130 nm SOI-CMOS process, showing a breakdown voltage up to 60 V (3-4x improvement compared to a traditional extended-drain MOSFET). These layout-enabled field plates allow an ultimate flexibility in device optimization, e.g. for multiple voltage domains, robust safe-operating-area and high-frequency power switching.

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“…Commercially available BCD technologies are continuously scaled to include more advanced CMOS nodes [1,2]. In order to make such advanced BCD technologies economically viable, the high voltage (HV) functionality should be integrated as a process option to an existing baseline CMOS without affecting the standard logic components.…”

Section: Introductionmentioning

confidence: 99%

Local buried oxide technology for HV transistors integrated in CMOS

Saarnilehto

Šonský

Meunier-Beillard

et al. 2007

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

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Automotive applications require full dielectric isolation of the high voltage and analog components. Such isolation is typically realized by BCD technologies built on SOI. The drawbacks of using SOI wafers, i.e. deviation from the baseline bulk CMOS and increased overall cost, can be addressed by manufacturing local SOI islands in the standard bulk wafer. This paper presents a method to manufacture a local buried oxide using LoBOX technology and its integration to baseline CMOS. Our LoBOX technology is based on a sacrificial SiGe layer buried in bulk substrate and subsequently replaced with oxide. It is a general isolation solution that allows flexible local SOI and local BOX thickness. We have integrated our LoBOX technology in a 130 nm bulk CMOS process to demonstrate its feasibility. The manufactured HV transistors isolated with local BOX, feature almost identical performance as those manufactured on commercial SOI wafers.

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Advanced 100V, 0.13 gm BCD process for next generation automotive applications

Cited by 12 publications

References 4 publications

Advanced BCD technology for automotive, audio and power applications

Advanced BCD technology for automotive, audio and power applications

Ultra-flexible, layout-enabled field plates for HV transistor integration in SOI-based CMOS

Local buried oxide technology for HV transistors integrated in CMOS

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