such as the thickness-dependent bandgap, which are attractive for ultra-scaled digital electronics beyond silicon, optoelectronics, and energy applications. [1] The danglingbond free structure of TMDs offers the unique possibility of realizing high-quality van der Waals heterostructures with bulk semiconductors for the implementation of advanced heterojunction devices exploiting current transport at the interface. [2][3][4][5] In particular, the integration of single or few layers MoS 2 with wide bandgap semiconductors, such as the group-III Nitrides (GaN, AlN, and AlGaN alloys) and 4H-SiC, is currently the object of increasing interest in optoelectronics (e.g., for the realization of high responsivity dual-band photo detectors covering the spectral ranges of visible and ultraviolet), [6][7][8][9][10][11] and in electronics (e.g., for the realization of heterojunction diodes, including band-toband tunnel diodes). [12][13][14][15][16][17] Motivated by these interests, different approaches have been employed to fabricate such heterojunction devices, including the transfer of MoS 2 flakes exfoliated from bulk crystals [6,9,10] or grown on foreign substrates, [12,13,18] and the direct deposition of MoS 2 on GaN [14][15][16] or 4H-SiC. [11,17] In particular, nearly unstrained and highly oriented monolayer MoS 2 triangular domains on the GaN( 0001) basal plane have been In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS 2 on 4H-SiC(0001) surfaces with different doping levels, i.e., n − epitaxial doping (≈10 16 cm −3 ) and n + ion implantation doping (>10 19 cm −3 ). After assessing the excellent thickness uniformity (≈3L-MoS 2 ) and conformal coverage of the PLD-grown films by Raman mapping and transmission electron microscopy, the current injection across the heterojunctions is investigated by temperature-dependent current-voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. A wide tunability of the transport properties is shown by the SiC surface doping, with highly rectifying behavior for the MoS 2 /n − SiC junction and a strongly enhanced current injection for MoS 2 /n + SiC one. Thermionic emission is found the dominant mechanism ruling forward current in MoS 2 /n − SiC diodes, with an effective barrier Φ B = (1.04 ± 0.09) eV. Instead, the significantly lower effective barrier Φ B = (0.31 ± 0.01) eV and a temperature-dependent ideality factor for MoS 2 /n + SiC junctions is explained by thermionic-field-emission through the thin depletion region of n + doped SiC. The scalability of PLD MoS 2 deposition and the electronic transport tunability by implantation doping of SiC represents key steps for industrial development of MoS 2 /SiC devices.
