2000
DOI: 10.1016/s0022-0248(00)00585-6
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Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering

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Cited by 41 publications
(34 citation statements)
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“…>From the absorption part of AC susceptibility the so-called contact-less critical current densities were calculated. The critical currents can be derived from the position of the absorption peaks employing Bean's critical state model and its extensions [11]. At the peak temperature the AC eld amplitude H ac penetrates into the sample and the current induced by the magnetic eld ows uniformly throughout the entire sample and is equal to the critical current density.…”
Section: Measuring Techniquesmentioning
confidence: 99%
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“…>From the absorption part of AC susceptibility the so-called contact-less critical current densities were calculated. The critical currents can be derived from the position of the absorption peaks employing Bean's critical state model and its extensions [11]. At the peak temperature the AC eld amplitude H ac penetrates into the sample and the current induced by the magnetic eld ows uniformly throughout the entire sample and is equal to the critical current density.…”
Section: Measuring Techniquesmentioning
confidence: 99%
“…At the peak temperature the AC eld amplitude H ac penetrates into the sample and the current induced by the magnetic eld ows uniformly throughout the entire sample and is equal to the critical current density. The Bean's model yields the following equation for the critical current density [11]:…”
Section: Measuring Techniquesmentioning
confidence: 99%
See 1 more Smart Citation
“…To avoid high microwave losses in such application, it is necessary to grow lms on sapphire substrates, with suitable buer layer to improve matching of the lattice parameters and to prevent chemical reaction between the superconductor and the substrate. It has been found that CeO 2 is the excellent material for the buer between the sapphire and the YBCO [3,4]. It is chemically very stable, it has high melting temperature (2400…”
Section: Introductionmentioning
confidence: 99%
“…This substrate has a low dielectric constant and high mechanical strength [2]. R-plane sapphire is highly chemically reactive towards TlBa-Ca-Cu-O films and shows a mismatch of ε = 17%.…”
Section: Introductionmentioning
confidence: 99%