Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

International audienceThe most profound effect of disorder on electronic systems is the localization of the electrons transforming an otherwise metallic system into an insulator. If the metal is also a superconductor then, at low temperatures, disorder can induce a pronounced transition from a superconducting into an insulating state. An outstanding question is whether the route to insulating behaviour proceeds through the direct localization of Cooper pairs or, alternatively, by a two-step process in which the Cooper pairing is first destroyed followed by the standard localization of single electrons. Here we address this question by studying the local superconducting gap of a highly disordered amorphous superconductor by means of scanning tunnelling spectroscopy. Our measurements reveal that, in the vicinity of the superconductor-insulator transition, the coherence peaks in the one-particle density of states disappear whereas the superconducting gap remains intact, indicating the presence of localized Cooper pairs. Our results provide the first direct evidence that the superconductor-insulator transition in some homogeneously disordered materials is driven by Cooper-pair localization

Scanning tunneling spectroscopy at very low temperature on homogeneously disordered superconducting Titanium Nitride thin films reveals strong spatial inhomogeneities of the superconducting gap ∆ in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature Tc towards zero, enhancement of spatial fluctuations in ∆, and growth of the ∆/Tc ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.PACS numbers: 74.50.+r, 74.78.Db, A pioneering idea that in the critical region of the superconductor-insulator transition (SIT) the disorderinduced inhomogeneous spatial structure of isolated superconducting droplets develops [1,2], grew into a new paradigm [3]. Extensive experimental research of critically disordered superconducting films revealed a wealth of unusual and striking phenomena, including nonmonotonic temperature and magnetic field dependence of the resistance [2,4,5,6], activated behavior of resistivity in the insulating state [1,5,6,7,8], nonmonotonic magnetic field dependence of the activation temperature, and the voltage threshold behavior [8,9,10]. These features find a theoretical explanation based on the concept of disorder-induced spatial inhomogeneity in the superconducting order parameter [10,11,12,13,14]. Numerical simulations confirmed that indeed in the high-disorder regime, the homogeneously disordered superconducting film breaks up into superconducting islands separated by an insulating sea [15,16]. At the same time the direct observation of superconducting islands near the SIT justifying the fundamental but yet hypothetical concept of the disorder-induced granularity on the firm experimental foundation was still lacking.In this Letter, we report on the combined low temperature Scanning Tunneling Spectroscopy (STS) and transport measurements performed on thin Titanium Nitride films on approach to the SIT. The local tunneling density of states (LDOS) measured at 50 mK reveals disorderinduced spatial fluctuations of the superconducting gap, ∆, with both, standard deviation σ to the average gap and the gap to the critical temperature ratios, σ/∆ and ∆/T c , respectively, increasing towards the transition.Our samples were thin TiN films synthesized by atomic layer chemical vapor deposition onto a Si/SiO 2 substrate. TiN1 was a 3.6 nm thick film deposited at 400• C while TiN2 and TiN3 were 5.0 nm thick films deposited at 350 • C. TiN3 was then slightly plasma etched in order to reduce its thickness. Electron transmission images revealed that the films comprise of the densely-packed crystallites with a typical size of 4 to 6 nm. The samples were patterned into the Hall bridges using conventional UV lithography and plasma etching. It is worth noticing that identically fabricated TiN films undergo the disorder-and magnetic field-driven SIT [4,8]. Transport measurements and STS were carried out during the same run in a STM attached to a dilution refrigerator. The STM Pt/Ir t...

One consequence of the continued downward scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations in the number of these dopants are already a major issue in the microelectronics industry. Although single dopant signatures have been observed at low temperatures, the impact on transistor performance of a single dopant atom at room temperature is not well understood. Here, we show that a single arsenic dopant atom dramatically affects the off-state room-temperature behaviour of a short-channel field-effect transistor fabricated with standard microelectronics processes. The ionization energy of the dopant is measured to be much larger than it is in bulk, due to its proximity to the buried oxide, and this explains the large current below threshold and large variability in ultra-scaled transistors. The results also suggest a path to incorporating quantum functionalities into silicon CMOS devices through manipulation of single donor orbitals.

A superconducting state is characterized by the gap in the electronic density of states, which vanishes at the superconducting transition temperature T c . It was discovered that in high-temperature superconductors, a noticeable depression in the density of states, the pseudogap, still remains even at temperatures above T c . Here, we show that a pseudogap exists in a conventional superconductor, ultrathin titanium nitride films, over a wide range of temperatures above T c . our study reveals that this pseudogap state is induced by superconducting fluctuations and favoured by two-dimensionality and by the proximity to the transition to the insulating state. A general character of the observed phenomenon provides a powerful tool to discriminate between fluctuations as the origin of the pseudogap state and other contributions in the layered high-temperature superconductor compounds.

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits.

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred mega-Hertz.

Shot noise refers to the fluctuations in electrical current through a device arising from the discrete nature of the charge-carrying particles. Recent experiments have exploited the fact that the shot noise is proportional to the charge of the carriers to establish fractional quantization of quasiparticles in the fractional quantum Hall effect. By a similar argument, it is expected that when a superconducting reservoir emits Cooper pairs, (which have a charge twice that of an electron) into a short normal-metal wire, the shot noise should be double that obtained for a normal-metal reservoir. Although the charge of Cooper pairs has been well established by flux quantization and tunnel experiments, doubling of their shot noise has not yet been observed. Here we report a shot-noise experiment using a short diffusive normal-metal superconductor contact, in which we confirm the predicted noise behaviour for double charges. The measurements, taken over a large range of bias current, establish that phase coherence is not required to observe the effect.