We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In the normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor FN ≈ 1/3 in magnetic field and in a reference normal metal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor FAR ≈ 0.22 ± 0.02 is considerably reduced in the AR regime compared to FN, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.A surface state of a three-dimensional topological insulator (3D TI) is a unique example of a spin-orbit coupled and symmetry protected conductor 1 . Similar to graphene, in 3D TI the surface electronic states are massless Dirac fermions. Unlike in graphene, however, a single Dirac cone is lacking spin and valley degeneracies. That makes a 3D TI an intriguing candidate for the realization of a solid state two-dimensional topological superconductor 2 . As originally proposed by Fu and Kane 3 , p-wave like superconducting correlations are expected to emerge via proximity coupling the 3D TI to a conventional stype superconductor (S). This gives rise to symmetry protected Majorana zero modes bound at vortices or at the boundaries of various hybrid structures 4,5 . Emerging zero modes are predicted to have a strong impact on the low energy physics, modifying Andreev reflection (AR) at the interface with a normal metal 6 , affecting the edge conductance distribution 7 , noise 8 and thermal transport 9,10 .Proximity induced superconductivity has been demonstrated in 3D TIs based on Bi 11-17 and HgTe 18,19 with the reported values of the induced gap on the order of a few 100 µeV. Similar gap values were recently observed via Andreev spectroscopy 20 in quaternary BiSbTeSe compound, established as a 3D TI with negligible contribution of the bulk conduction 21,22 . In spite of these advances, the microscopic nature of the proximity induced gap in Bi-based 3D TIs remains largely unexplored. This particularly concerns the statistics of the transmission eigenvalue distribution in short junctions and the role of possible in-gap states. On this route, valuable information, often hidden in transport, can be obtained via measurements of the non-equilibrium current fluctuationsthe shot noise 23 . Relevant for the AR, prominent examples include unusual shot noise behavior at the interface between a normal metal and superconductors with other than s-type order parameter symmetry 24,25 and, more recently, shot noise detection of the thermal and charge transport via Majorana zero modes 9,10,26 .Here, we investigate the AR in latera...