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Cite this article as: V.A. Pustovarov, Т.P. Smirnova, M.S. Lebedev, V.A. Gritsenko and M. Kirm, Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation, Journal of Luminescence, http://dx.doi.org/10. 1016/j.jlumin.2015.10.053 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting galley proof before it is published in its final citable form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO 2 and Al 2 O 3 films, respectively.Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x= 4; 17; 20 at.%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and nsluminescence decay kinetics, as well as changes in the time-resolved luminescence and 2 luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed.

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