A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy

Каичев, В. В.; Dubinin, Yu. V.; Smirnova, T. P.; Lebedev, M. S.

doi:10.1134/s002247661103005x

Cited by 10 publications

(6 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The second possible reason invokes some chemical modification of the HfO 2 layer below the TiN/TiAl stack. According to the literature, 54,55 the increase of Hf 4f BE relative to that of HfO 2 accompanies formation of HfAlO mixed oxide. Indeed, incorporation of more covalent Al oxide (relative Hf oxide) would lead to increase of Hf oxide ionicity, i.e., to the increase of Hf 4f BE in HfAlO relative to HfO 2 .…”

Section: ■ Results and Discussionmentioning

confidence: 97%

“…The feasibility of this explanation is supported by CV and IPE results indicating that introduction of the TiAl layer significantly reduces EWF in thin TiN layers deposited on SiO 2 ; i.e., this effect is associated with redistribution of N atoms in the metal stack itself.The second possible reason invokes some chemical modification of the HfO 2 layer below the TiN/TiAl stack. According to the literature,54,55 the increase of Hf 4f BE relative to that of HfO 2 accompanies formation of HfAlO mixed oxide. Indeed, incorporation of more covalent Al oxide (relative Hf oxide) would lead to increase of Hf oxide ionicity, i.e., to the increase of Hf 4f BE in HfAlO relative to HfO 2 .…”

mentioning

confidence: 97%

See 1 more Smart Citation

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO₂ and SiO₂

et al. 2020

View full text Add to dashboard Cite

Using combination of electrical measurements and internal photoemission interface barrier characterization the effective workfunction (EWF) changes of nm-thin TiN layer deposited on top of oxide insulators (SiO2, HfO2) have been correlated with atomic and chemical composition of the metal/oxide interfaces characterized by photoelectron spectroscopy and X-ray absorption.The major mechanisms of the EWF tuning are shown to be correlated to re-distribution of light N and O atoms. Oxygen scavenging from the underlying changes the TiN EWF by forming Ti oxynitride layer at the interface and introducing charge traps in the near-interface oxide layer.By contrast, significant (≈1 eV) reduction of EWF ban be achieved by introduction of a thin TiAl getter layer on top of TiN film. The mechanism of this reduction can be traced down to formation of metallic Ti caused by nitrogen scavenging by TiAl as evidenced by AlN formation.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 97%

mentioning

confidence: 97%

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO₂ and SiO₂

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The most intense peak in this spectrum is at 16.7 eV, which is consistent with stoichiometric HfO 2 . 61 , 62 The best fit to this spectrum was achieved by adding a second component at 17.4 eV. This additional chemical state could be due to surface states, defects, or carbon bound to the surface of the film.…”

Section: Resultsmentioning

confidence: 99%

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Vemuri,

King,

Thorpe

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Post deposition annealing of molecular layerdeposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF 4 /O 2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.

show abstract

“…Capacitance-voltage (CV) and current-voltage (IV) characteristics of the test Al/high-k dielectric/Si stacks also were recorded. The detailed description of the approaches for films investigation can be found in the referenced works: Raman spectroscopy [1], XPS [2][3], EDS [4], TEM [2], ellipsometry [5].…”

Section: Methodsmentioning

confidence: 99%

Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization

Lebedev¹

2012

KEM

View full text Add to dashboard Cite

Structures to Be Based on Hafnium Dioxide Are Regarded as the Most Perspective High-K Dielectric for Integration in MOS-Technology, Carbon Nanotubes Transistors. MOCVD (Metal-Organic Chemical Vapor Deposition) Techniques of HfO2, Al2O3 and (Al2O3)x(HfO2)1-X Thin Films Were Applied Using Metal-Organic Substances as the Precursors. Dependences of Growth Rates on Process Parameters Were Studied. The Chemical Structure and Properties of the Films and Electrophysical Characteristics of the Test Structures Were Investigated.

show abstract

A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy

Cited by 10 publications

References 43 publications

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO₂ and SiO₂

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO₂ and SiO₂

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization

Contact Info

Product

Resources

About

A study of the structure of (HfO2) x (Al2O3)1−x /Si films by X-ray photoelectron spectroscopy

Cited by 10 publications

References 43 publications

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2

Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing

Thin-Film Compositions on Base of Hafnium Dioxide and Aluminum Oxide: Synthesis and Characterization

Contact Info

Product

Resources

About

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO₂ and SiO₂

Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO₂ and SiO₂