We demonstrate a vacuum-deposited organic light emitting device which emits from its top surface through a transparent indium-tin-oxide anode. This device employs a novel protective cap layer which prevents damage to the organic layers during sputter deposition of the anode, while also improving hole injection. Mechanisms of current transport and carrier injection from the contacts are investigated. This device configuration allows for integration of organic light emitting devices with n-channel field effect transistors used in display active matrix backplanes.

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We demonstrate the growth of small band gap (Eg∼0.6 eV) strained and lattice matched single crystal InGaAsN alloys on InP substrates. InGaAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen source. Lattice-matched, 0.5-μm-thick InGaAsN layers with smooth surface morphologies and abrupt interfaces were achieved. Low temperature photoluminescence measurements reveal a band gap emission wavelength of 1.9 μm (at 20 K) for lattice matched InGaAsN (N∼2%). Tensile strained In0.53Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 μm at 20 K are also reported.

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