High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

High-efficiency diode lasers at high output power

“…Usually, the internal loss of a diode laser is between 2 and 5 cm Ϫ1 . 3,7,[9][10][11][12] Even when a broad waveguide structure is employed, it is still difficult for the internal loss to be decreased to near 1 cm Ϫ1 . 7,10-12 In a lot of cases, the decrease in the internal loss is accompanied with a lower internal quantum efficiency.…”

Self-Consistent Analysis of GaInNAsSb/GaSb Quantum Well Lasers Emitting at 2.3–3.3-μm -Long Wavelength

“…The last term is a constant, accounting for scattering losses. The losses in the cladding, quantum well and waveguide are proportional to the confinement factor in each region and also to the carrier cross section [25]. We have assumed for the laser structure that the losses in the p-doped region are dominant compared to the n-doped region, as demonstrated by Rattunde et al [26].…”

“…Let's examine the case of In 0.35 Ga 0.65 As 0.11 N z Sb 0.89 /Al 0. 25 increase creates a non-uniform distribution of carriers amongst the quantum wells and the majority of the radiative recombination is obtained from the quantum well closest to the n-cladding layer. In Figure 5a, we have plotted the normalized electron current versus position and we see that for a nitrogen concentration equal to zero (2.3µm), 60 % of the electron Fig.…”

Device Characteristics of Low-Threshold Quantum-Dot Lasers

“…60 The device reaches COMD in pulsed operation at the internal optical power density of 11 MW/cm 2 , that is 40% higher than the COMD level in CW operation. Further progress in the direction of high-power QD lasers can be achieved applying the concept of broad waveguide 64 and proper facet coating.…”