Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (CsH702)2 as Zn source. The deposited thin ZnO layers of -0,l pm thickness on Si and InP semiconductor substrates have been investigated with respect to crystalline phase by X ray diffraction (XRD), by AFM for surface morphology, spectrophotometric measurements in UV-VIS-NIR spectral range and optoelectrical measurements of ZnO/semiconductor heterostructures.
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