Single and periodically Si δ-doped InP layers were grown by LP-MOVPE at 640 • C. A full width at half maximum of 32 Å was obtained for the net charge concentration profile for a sample with a peak net charge concentration of 1.8 × 10 19 cm −3 . Numerical simulations showed that the impurities are localized over less than three InP monolayers. No dopant diffusion or segregation was observed. The periodic structures, grown with barriers varying from 100 to 300 Å, all had nearly the same carrier sheet concentration per dopant layer and impurity localization characteristics.
A series of periodically Si δ-doped InP samples with 5 and 10 periods varying from 92 to 278 Å has been investigated in terms of the transport and optical properties. A reduction in mobility with decreasing period was observed due to the increasing overlap of the electronic wavefunction with the various Si planes. A broad band emission was detected for the periodic structures at energies higher than the InP band gap. The cutoff energy for this band decreases with the period and this behavior can be described by a d−2/3 decay. The results are discussed and compared with the ones for GaAs available in the literature.
Single Si &doped InP samples were grown at 640°C with different doping concentrations. A full width at half maximum for the net charge concentration profile of 32A was obtained, which corresponds to an impurity localization over less than 8 A according to numerical simulations. No dopant diffusion or segregation was observed. A series of periodically Si 6-doped InP structures with 5 and 10 periods varying from 92 to 278 A has been investigated. A reduction in mobility with decreasing period was observed due to the increasing overlap of the electronic wavefunction with the various Si planes. A broad band photoluminescence emission was detected for the periodic structures at energies higher than the InP band gap. Its intensity decreases with a reduction in the period indicating the 3D character of the sample. The cutoff energy for this band decreases with the period and this behavior can be described by a d-2'3 decay which is expected from a 3-dimensional system.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.