Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy

Abstract

A series of periodically Si δ-doped InP samples with 5 and 10 periods varying from 92 to 278 Å has been investigated in terms of the transport and optical properties. A reduction in mobility with decreasing period was observed due to the increasing overlap of the electronic wavefunction with the various Si planes. A broad band emission was detected for the periodic structures at energies higher than the InP band gap. The cutoff energy for this band decreases with the period and this behavior can be described by a d−2/3 decay. The results are discussed and compared with the ones for GaAs available in the literature.

Anisotropy of the cyclotron mass in superlattices containing two populated minibands

“…On (100) Fe-doped InP substrates, first a 0.3 µm thick undoped buffer layer was grown, followed by 15 deltadoped layers, and finally a 550 Å cap was deposited. More details of the sample growth and characteristics are described elsewhere [7]. The Shubnikov-de Haas (SdH) spectrum was measured in magnetic fields of intensity 0-17 T, using a fourcontact geometry; the sample itself was approximately square with contacts in the corners.…”

Analysis and modeling of the experimentally observed anomalous mobility properties of periodically Si-delta-doped GaN layers

“…The energy level quantization and spatial electron-donor separation in the subbands lead to a higher carrier mobility of the highly doped region than that of the normally doped samples with the same doping level. [11][12][13] Using the fitting parameters, the whole mobility l could be calculated. The comparison of the calculated values with the experimental ones for samples E-H is shown in Fig.…”