Single and periodically Si -doped InP grown by LP-MOVPE

Yavich, B.; Souza, P. L.; Pamplona-Pires, M.; Henriques, A. B.; Gonçalves, L. C. D.

doi:10.1088/0268-1242/12/4/025

Cited by 5 publications

(5 citation statements)

References 16 publications

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“…The width can be compared with theoretical estimates and a possible broadening of the dopant profile can be deduced. [16][17][18] There have been attempts made to use Schottky contacts for additional investigations of ␦ layers by dynamical capacitance measurements, namely to study an electron or hole emission from the quantum well by the standard deep level transient spectroscopy ͑DLTS͒ method. Peaks due to free carrier emission were observed in both highly ␦-doped (ϳ10 17 m Ϫ2 ) silicon 19 and gallium arsenide, 20 and the activation energies found were assigned to energy positions of bottoms of ground and excited subbands.…”

Section: Introductionmentioning

confidence: 99%

Deep levels in GaAs due to Si δ doping

Hubı́k

Krištofik

Mareš

et al. 2000

Journal of Applied Physics

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␦͑Si͒-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitancevoltage and deep level transient spectroscopy ͑DLTS͒ techniques. A detailed analysis of the DLTS signal ͑including spatial profiles͒ is performed. DLTS spectra exhibit a clear development depending on the sheet dopant concentration ranging from 5ϫ10 14 to 2ϫ10 16 m Ϫ2 . Two observed peaks do not change its activation energy with the doping level while their amplitude increases rapidly when the doping rises. We assign them to defects generated by high silicon concentration, probably related to gallium vacancy. Another peak in the most densely doped sample seems to correspond to the DX level which is occupied near the ␦ layer. Peculiar features of the EL2 level are observed in ␦-doped GaAs and explained by the band bending due to the dopant sheet. No indication of the emission from the quantum confinement states is found in DLTS spectra taken at temperatures 80-400 K.

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Section: Introductionmentioning

confidence: 99%

Deep levels in GaAs due to Si δ doping

Hubı́k

Krištofik

Mareš

et al. 2000

Journal of Applied Physics

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“…The technique should apply to a structure with an arbitrary number of periods and doping strength; electric breakdown can be avoided if C-V measurements are made in the etching mode. Notice, however, that the etching procedure introduces a broadening of the C-V peaks (see [6] for details), as a consequence of which the experimental C-V spectrum will display only a finite number of oscillations associated with the δ layers nearest to the surface of the sample.…”

Section: Resultsmentioning

confidence: 99%

“…If the areal density of impurity atoms is known, the width of the δ layer can be estimated by calculating self-consistently the theoretical C-V spectrum [4]. In such a calculation, the width of the δ layer is a variable input parameter; the true width of the δ layer is taken to be equal to the parameter value which leads to a theoretical C-V spectrum in best agreement with the experimental one [5,6].…”

Section: Introductionmentioning

confidence: 99%

Characterization of periodically -doped semiconductors by capacitance - voltage profiling

Gonçalves¹,

Henriques²,

Souza³

et al. 1997

Semicond. Sci. Technol.

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The capacitance-voltage (C -V ) profiles of periodically Si-δ-doped InP samples were measured, and these are described by a succession of equally spaced peaks, with a spatial periodicity which closely matches the intended doping period. Theoretical C -V spectra for periodically Si-δ-doped semiconductors were calculated. Analysis of the data indicates that the spacing between the peaks seen in the experimental C -V spectrum is a reliable measure of the true doping period of the sample. The C -V spectrum of the periodically δ-doped semiconductor is well approximated by a linear combination of C -V curves for isolated δ-doped layers located at successive positions of analogous layers in the periodically δ-doped sample. The practical limitations of the C -V technique when applied to periodically δ-doped semiconductors are discussed.

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“…2 is the net charge distribution profile obtained from C-V measurements in sample 187 which has a single &doped layer. The profile shows a FWHM equal to 35w corresponding to an atomic distribution of around 8 A [20], as determined by solving self-consistently the Poisson and Schrodinger equations within the Hartree approximation for the gated delta-doped structure [3,12], once the sheet dopant concentration is known. The dopant localization is used as an input parameter so that the real atomic localization corresponds to the one which gives a theoretical CV profile that best agrees with the experimental one.…”

Section: Methodsmentioning

confidence: 99%

Si δ-doping superlattices in InP grown by low-pressure metalorganic vapor phase epitaxy

Souza

Yavich

Pamplona-Pires

et al. 1998

Radiation Effects and Defects in Solids

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Single Si &doped InP samples were grown at 640°C with different doping concentrations. A full width at half maximum for the net charge concentration profile of 32A was obtained, which corresponds to an impurity localization over less than 8 A according to numerical simulations. No dopant diffusion or segregation was observed. A series of periodically Si 6-doped InP structures with 5 and 10 periods varying from 92 to 278 A has been investigated. A reduction in mobility with decreasing period was observed due to the increasing overlap of the electronic wavefunction with the various Si planes. A broad band photoluminescence emission was detected for the periodic structures at energies higher than the InP band gap. Its intensity decreases with a reduction in the period indicating the 3D character of the sample. The cutoff energy for this band decreases with the period and this behavior can be described by a d-2'3 decay which is expected from a 3-dimensional system.

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Single and periodically Si -doped InP grown by LP-MOVPE

Cited by 5 publications

References 16 publications

Deep levels in GaAs due to Si δ doping

Deep levels in GaAs due to Si δ doping

Characterization of periodically -doped semiconductors by capacitance - voltage profiling

Si δ-doping superlattices in InP grown by low-pressure metalorganic vapor phase epitaxy

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