Abstract-A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction-bipolar-transistor (HBT) differential-pairs. The metal grid pattern was empirically designed to provide effective coupling between the HBT's and free space. Two independent measurements, one with focusing lenses, the other without, were used to characterize the grid. In each case, the peak gain was 10 dB at 10 GHz with a 3-dB bandwidth of 1 GHz. The input and output return loss were better than 15 dB at 10 GHz. The maximum output power was 450 mW, and the minimum noise figure was 7 dB. By varying the bias, a signal could be amplitude modulated with a modulation index as large as 0.65. Tests show that the grid was quite tolerant of failures-the output power dropped by only 1 dB when 10% of the inputs were detuned. The grid amplifier is a multi-mode device that amplifies beams of different shapes and angles. Beams with incidence angles up to 30" were amplified with less than a 3-dB drop in gain.

Abstruct-A 100-element hybrid grid amplifier has been fabricated. The active devices in the grid are custom-made pseudoransistor (pHEMT) differentialfor gain analysis and compare rid includes stabilizing resistors the grid has a peak gain of 10 a gain of 12 dB when tuned for andwidth is 15% at 9 GHz. The m~n i~u m noise figure is 3 dB. The maximum saturated output power is 3.7 W, with a peak power-added efficiency of 12%. are a significant improvement over previous grid ed on heterojunction bipolar transistors (HBT's).The maximum ljlput &=am E

A QO power divider were fabricated practically and the S-parameter was measured at 37.5GHz using a Millimeter wave vector network analyzer (37369C, Anritsu). The measured transmission coefficients between all output ports and input port are shown in Figure 11. The insertion loss variation of different output ports was less than 62.1 dB and the relative phase variation less than 9. Total output power was achieved by adding up the power of all out ports to be 80.8% of the input power at the designed working frequency, which is well agreed with the simulated value of 88.7%. CONCLUSIONSA general method of designing QO power divider was proposed in this article. And applying this method, a 1 Â 18 QO power divider was designed successfully. The measured results of the divider were consistent with that of simulation, and the ratio of the total output power to the input power was 80.8%. So feasibility of holography QO power-combining was verified and validity of method of designing was also confirmed by the experiment.Divider to split input power into further more outputs directly can be designed using this method. And this method can be used to solve the heat-sinking problem at higher frequencies even at submillimeter wave band because of no degradation of dividing efficiency resulted by enlarging spacing between neighbor output ports. ACKNOWLEDGMENTSThe authors will thank to Southwest Institute of Electronic Technology for financial support of this research. ABSTRACT: An on-board uniplanar printed mobile handset antenna with a small size of 15 Â 30 mm 2 for 8-band long term evolution/wireless wide area network (LTE/WWAN) (698-960/1710-2690 MHz) operation is presented. The antenna is a spiral monopole coupled with a long parasitic shorted strip. The spiral monopole has a length of 78 mm (about 0.25 wavelength at 950 MHz), while the shorted strip capacitively excited by the spiral monopole has a length of 125 mm (close to 0.25 wavelength at 700 MHz). The spiral monopole is encircled by the shorted strip so that the antenna has a compact configuration to fit in a small no-ground portion at the corner of the bottom edge of the main circuit board in the mobile handset. In addition, the antenna is closely integrated with the system ground plane on the main circuit board and is spaced by a small distance of 0.5 mm to the nearby system ground plane. This leads to compact integration of the on-board LTE/WWAN printed antenna on the main circuit board of the mobile handset. Results of the proposed antenna including its specific absorption rate and hearing aid compatibility behavior are presented and discussed. The antenna is about the smallest for the on-board all-printing LTE/WWAN handset antennas that have been reported for the present. [20,21] or the lens of the embedded digital camera [22][23][24] on the main circuit board and limits the compact integration of the LTE/WWAN antenna inside the mobile handset.In this article, we present an on-board printed internal mobile handset antenna for eight-band LTE/WWAN operation with ...

Abstract-A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660W at 9.8GHz and has a directivity of 18.0dB. This corresponds to a total radiated power of 10.3 w , or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4V and the total drain current for the grid is 6.0A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the SSB noise-to-carrier ratio was measured and found to be essentially independent of the radiation angle. The average SSB noise level was -87 dBc/Hz at an offset of 150 kHz from the carrier. An average improvement in the SSB noise-to-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a 16-transistor grid.

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