Abstrucr-The inclusion of embedded Flash memory in systemson-chip designs enables the addition of many new features. However to enable designers to embed Flash memory in an efficient and competent manner, they must have the capability to simulate full circuit operation. Therefore a flexible Flash EEPROM model is required.An accurate and numerically efficient model for the transient and DC characteristics of Fowler Nordheim (FN) based Flash EEPROM cells has been developed. The model has been extensively validated, using read, program and erase operations. The model has also been applied to several applications, in a typical structure. These display the ability of the model to accelerate the design cycle for applications which require Flash memory.
An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.
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