We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50nm-diameter. A L1 0 -crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.
IntroductionRecently, magnetoresistive random access memory (MRAM) based on spin-transfer torque (STT) switching has been intensively developed as a most promising non-volatile random access memory. The reasons are the good scalability, good non-volatility, and fast-switching time (1). The STT switching of a TMR element with perpendicular magnetic anisotropy has attracted considerable attention in recent years (2-7), because of small cell size of 6F 2 and the lower programming current than that of a TMR element with in-plane shape magnetic anisotropy (I-TMR) (2). L1 0 -crystalline ordered alloy like FePt is one of candidates for the P-TMR because of large anisotropic energy Ku of order of 10 7 erg/cc and high thermal stability (3).In this paper, we have designed and fabricated a P-TMR element using L1 0 -crystalline ordered alloy as the free layer and successfully demonstrated low-current and fast switching time. We fabricated 1kbit array of P-TMR elements to show memory performance.
It has been clarified that the radical oxidation with the oxygen remote plasma improves the electrical reliability of the Si02 films, compared with the dry oxidation. By the TEM observation and the X-ray-scattering-reflectivity spectroscopy it was demonstrated that, in the radical oxides, planarization of the Si02/Si( 100) interface and densification of the Si02 films due to repairing of the Si02 network were realized, compared with those in the dry oxides. Moreover, it was also found that the radical oxidation can realize a reliable Si02 in the lower oxidation temperatures even down to 700 "C.
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