Radical oxygen (O/sup */) process for highly-reliable SiO/sub 2/ with higher film-density and smoother SiO/sub 2//Si interface

Nagamine, M.; Satake, Hideki; Toriumi, Akira

doi:10.1109/iedm.1998.746428

Cited by 18 publications

(35 citation statements)

References 5 publications

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“…Despite there are also annealed with other gas species such as N 2 and O 2 which does not seem to show significant improvement. The hypothesis of such a behavior are explained in Fig 4. The presence of H 2 content [1] during annealing accelerates the dissociation of molecular oxygen into reactive atomic oxygen (O*) which can repair existing oxide layer's structural defects [2], creating a stronger Si-SiO 2 bond towards penetration against electrical stress. Hence longer time to breakdown against constant current stressing could be achieved.…”

Section: A Electrical Analysismentioning

confidence: 99%

Improvement of the dielectric film characteristics of Inter-poly Oxide-Nitride-Oxide (ONO) in Flash memory devices

Chien

2012

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings

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This Inter-poly Oxide-Nitride-Oxide (ONO) dielectric film has been widely used as dielectric films in stacked gate Flash memory devices. The ONO dielectric film plays an important role in ensuring good reliability in flash memory devices. In this paper, the characteristics of ONO dielectric films have been analyzed. These ONO films were fabricated using different methods, including conventional furnace deposition and an In-Situ Steam Generated (ISSG) process. The quality of the dielectric film has been evaluated electrically on silicon. Electrical characterization of the above-fabricated wafers were first carried out using the constant current stressing method, followed by an additional verification carried out on actual memory cells, to investigate the Flash memory write/erase endurance. Better reliability performance of ISSG deposited film over the conventional furnace deposited film has been demonstrated. The results also suggest that the bottom oxide layer could be the cause of the overall ONO dielectric film degradation. The possibility of further reliability improvement over furnace deposited dielectric film is also described in this paper.

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Section: A Electrical Analysismentioning

confidence: 99%

Improvement of the dielectric film characteristics of Inter-poly Oxide-Nitride-Oxide (ONO) in Flash memory devices

Chien

2012

2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings

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“…Since the thin base oxides are prone to suffer from penetration of nitrogen radicals during plasma nitridation, the "radical-induced re-oxidation" effect will lead to the EOT increase of ultra-thin gate oxide [13]. A systematical investigation on these thinner dielectrics is necessary.…”

Section: Eot and Gate Leakage Currentmentioning

confidence: 99%

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

Zhang

Wang

2011

Sci. China Inf. Sci.

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The gate leakage current and reliability concern become more serious due to the aggressive scalingdown of the gate oxide thickness. Developing advanced gate dielectrics process for mass production is essential in China. In this paper, the gate leakage current reduction and reliability optimization for plasma nitridation SiON aimed at 65 nm node CMOS application was explored. A three-step fabrication process based on single wafer tools for plasma nitridation SiON has been demonstrated. The effects of each process condition on the electrical and reliability characteristics of plasma nitridation SiON have been investigated in terms of nitrogen concentration, equivalent oxide thickness(EOT), gate leakage current, mobility, time-dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). The optimized plasma nitrided oxide demonstrated good gate leakage reduction and high carrier mobility without sacrificing the reliability performance. This optimized plasma nitridation process has been implemented into the mass production to meet the throughput and reliability requirement.

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“…There appears to be no major thickness dependence to trap generation [340,343,355,511,553,573,581]. Similarly, there appears to be no major effect of changing the gate voltage polarity on trap generation, other than, injecting electrons from the smoother oxide-substrate interface (positive gate voltage) results in more uniform trap generation, longer time-to-breakdown, and more traps in the oxide at breakdown, a seemingly contradictory concept [46,47,256,504,523,625,680].…”

Section: Oxide Trap Generationmentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed here. The importance of stressinduced-leakage-currents (SILCs) and direct tunneling currents will be discussed in the context of device applications, thinner oxides, and oxide reliability. The diminishing importance of breakdown in ultra thin oxides in ultra small devices will be contrasted with the increasing importance of oxide leakage currents. Trap generation is important in the triggering of breakdown and in the formation of SILCs. Trap generation will be discussed in some detail. Various statistical formulations of oxide breakdown, and how these distributions are related to trap generation, will be discussed. All of these effects will be related to oxide reliability and oxide integrity. An extensive bibliography has been included to help the reader obtain more detailed information concerning the concepts being discussed. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Oxide Wearout, Breakdown, and Reliability 619found in an early review paper [20]. This wearout/breakdown model will be referred to as the "Klein/Solomon" model below when comparisons with modern works are needed.The Klein/Solomon model has been refined and confirmed continuously from the 1970s through the present time [10,20,. The extent of the damage is determined both by the 1/2 CV 2 energy stored in the capacitor and by the rate at which this energy discharges through the local hot spot [10,20,75,82,83,88,92,93,96,[100][101][102]. The local hot spot is often accompanied by light emission, in many cases incandescence [8-10, 103-115]. Several techniques have been developed for using the damage introduced during the breakdown to study the breakdown process [80,[116][117][118][119][120][121][122][123][124]. During the breakdown event, the stored energy in the capacitor, 1/2 CV 2 , partially discharges through the breakdown region in a time limited by the impedance of the total measurement system [8][9][10][82][83][84][85].The local breakdowns are intimately coupled to the trap generation and various trap generation models will be discussed in a separate section.During the breakdowns described by Klein/Solomon, one of two scenarios is possible during and following a breakdown discharge. Which scenario takes place depends on the oxide thickness, the oxide area, the magnitude of the stored energy, the ...

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Radical oxygen (O/sup */) process for highly-reliable SiO/sub 2/ with higher film-density and smoother SiO/sub 2//Si interface

Cited by 18 publications

References 5 publications

Improvement of the dielectric film characteristics of Inter-poly Oxide-Nitride-Oxide (ONO) in Flash memory devices

Improvement of the dielectric film characteristics of Inter-poly Oxide-Nitride-Oxide (ONO) in Flash memory devices

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

Oxide Wearout, Breakdown, and Reliability

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