High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

Yasuda, Hiroaki; Kishi, T.; Nagase, T.; Yoshikawa, Masayuki; Nishiyama, K.; Kitagawa, E.; Daibou, T.; Amano, M.; Shimomura, N.; Takahashi, Shigeki; Kai, Tadashi; Nakayama, M.; Aikawa, H.; Ikegawa, S.; Nagamine, M.; Ozeki, J.; Mizukami, Shigemi; Oogane, Mikihiko; Ando, Yasuo; Yuasa, Shinji; Yakushiji, Kay; Kubota, Hiroshi; Suzuki, Y.; Nakatani, Yoshinobu; Miyazaki, T.; Ando, Koji

doi:10.1016/j.cap.2009.12.021

Cited by 174 publications

(59 citation statements)

References 4 publications

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“…[a]: [15] Mn-based hard magnets are very good candidates for magnetic random access memory (MRAM) applications [24,25] because some of them show a small saturation magnetization as well as a large uniaxial magnetic anisotropy. The Gilbert magnetic damping is expected to be smaller than that of hard magnets containing heavy elements because the addition of heavy elements or rare-earth elements to magnetic materials tends to increase the Gilbert damping [25].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

Sugihara

Suzuki

Miyazaki

et al. 2015

Metals

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Mn 3 Ge has a tetragonal Heusler-like D0 22 crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn 3 Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn 3 Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn 3 Ge on Rh show somewhat small coercivity (H c = 12.6 kOe) and a large perpendicular magnetic anisotropy (K u = 11.6 Merg/cm 3 ), comparable to that of the film grown on Cr.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

Sugihara

Suzuki

Miyazaki

et al. 2015

Metals

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“…On the other hand, perpendicular magnetic anisotropy (PMA) is a key for high density magnetic recording in spintronics devices today. [15][16][17] Two series of Mn 2 CoAl thin films were fabricated by direct current magnetron sputtering from a stoichiometric target with Mn:Co:Al = 2:1:1 (at.%) and the film composition analyzed by X-ray photoelectron spectroscopy (XPS, ESCALAB 250Xi) is about Mn:Co:Al = 2.2:0.9:0.9, which shows a deviation from stoichiometric ratio. The first series of samples are 40-nm-thick single layers deposited on MgO(100) substrates.…”

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confidence: 99%

Perpendicular magnetic anisotropy in Mn2CoAl thin film

Sun

Zhang

et al. 2016

AIP Advances

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Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.

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“…Reducing the critical current of magnetic reversal and enhancing the thermal stability are two of key issues for the MRAM applications. The perpendicular magnetic anisotropy (PMA) and high spin polarization of the ferromagnetic layer are theoretically predicted and experimentally verified to be useful for solving the issues [1][2][3][4]. Very high MR ratio has been reported in the systems with the Heusler alloy Co 2 FeAl 0.5 Si 0.5 (hereinafter referred to as CFAS) and a very high spin polarization has been demonstrated at room temperature too [5][6][7].…”

Section: Introductionmentioning

confidence: 99%