Perpendicular magnetic anisotropy in Ta/Pd/Co2FeAl0.5Si0.5/MgO/Ta structured films

Fu, Huarui; Chen, You; Zhang, X.; Tian, Na

doi:10.1016/j.physb.2015.04.026

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…By exploring new material selection options in Heusler alloy/Pt multilayer structures, our work will be helpful in the advancement of spintronic devices. 54…”

Section: Discussionmentioning

confidence: 99%

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Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe₂CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Liu

Chen

Ren

et al. 2019

ACS Appl. Electron. Mater.

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We report a large interfacial perpendicular magnetic anisotropy (PMA) in [Fe2CoSi/Pt] n (FCS/Pt) multilayers deposited on thermally oxidized Si substrates. A maximum anisotropy energy density, K u, of 2.64 Merg/cm3 is achieved with an optimized stack. We are able to tune the PMA by adjusting the Pt and FCS film thicknesses and number of periods of the multilayer structure, as these significantly affect the lattice structure of FCS/Pt stack. Both high-resolution transmission electron microscopy and structural relaxation of the atomistic model using first-principles calculations reveal that while the multilayer structure assumes a monoclinic structure (α = 84°), the FCS films undergo a local orthorhombic distortion from the bulk structure due to the strain imposed by the FCS/Pt interface. By analyzing the orbital-resolved density of states of the system, we propose that both the orthorhombic distortion of the FCS and orbital interactions between interface Pt and Fe atoms are responsible for the high PMA. For the first time, a large interfacial PMA is demonstrated in the Fe-based Heusler/Pt multilayer structure with underlying mechanisms discussed via both experiments and first-principles calculations. Thus, we have shown that there is great potential in strain-enhanced FCS/Pt multilayers in future applications in spintronic devices.

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“…By exploring new material selection options in Heusler alloy/Pt multilayer structures, our work will be helpful in the advancement of spintronic devices. 54…”

Section: Discussionmentioning

confidence: 99%

“…The multilayers exhibit smooth crystalline interfaces for all values of t Pt , t FCS and buffer layer thickness. By exploring new material selection options in Heusler alloy/Pt multilayer structures, our work will be helpful in the advancement of spintronic devices …”

Section: Discussionmentioning

confidence: 99%

Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe₂CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Liu

Chen

Ren

et al. 2019

ACS Appl. Electron. Mater.

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“…Recently, due to the characteristics of large spin polarization, low damping, and high Curie temperature, Co-based Heusler alloys have become an ideal representative of ferromagnetic layer which are used to manage PMA properties [10]. Up to now, PMA has been obtained in the ferromagnetic/oxide structures of Co 2 FeSi/MgO [11], Co 2 FeAl 0.5 Si 0.5 / MgO [12,13], Co 2 MnSi/MgO [14], Co 2 MnGa/MgO [15], Co 2 FeAl/MgO [16] and others. Lately, MgAl 2 O 4 (MAO) has been studied and applied as one of the excellent candidates of tunnel barrier materials [17][18][19], which possesses the dominant features of chemical stability and non-deliquescent property as the oxide layer compared to MgO.…”

Section: Introductionmentioning

confidence: 99%

Perpendicular magnetic anisotropy of Pd/Co₂MnSi/MgAl₂O₄/Pd structure films

Wen¹,

Xiu²,

Jiang³

et al. 2019

J. Phys. D: Appl. Phys.

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The existence of strong perpendicular magnetic anisotropy (PMA) with a K eff value of 0.579 × 10 6 erg cm −3 was observed in Pd(6 nm)/Co 2 MnSi(5 nm)/MgAl 2 O 4 (1 nm) trilayers which were prepared at a substrate temperature of 350 °C. It was found that introducing proper oxygen (Ar:O 2 = 18:2) in the oxide preparation process is crucial for the acquisition of PMA. In addition, PMA is also found to be strongly sensitive to the thickness of the Co 2 MnSi (CMS) and MgAl 2 O 4 (MAO) layers. The PMA can be regulated in a wider range of t CMS (4-5.7 nm), and the maximum t CMS of PMA can be maintained at 5.7 nm. For t CMS = 5 nm, the structure can maintain PMA under the condition of t MAO of 0.9-1.3 nm.

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Interface alloying of ultra-thin sputter-deposited Co2MnSi films as a source of perpendicular magnetic anisotropy

Basha

Lévi

et al. 2019

Journal of Magnetism and Magnetic Materials

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Perpendicular magnetic anisotropy in Ta/Pd/Co2FeAl0.5Si0.5/MgO/Ta structured films

Cited by 5 publications

References 19 publications

Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe₂CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe₂CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Perpendicular magnetic anisotropy of Pd/Co₂MnSi/MgAl₂O₄/Pd structure films

Interface alloying of ultra-thin sputter-deposited Co2MnSi films as a source of perpendicular magnetic anisotropy

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Perpendicular magnetic anisotropy in Ta/Pd/Co2FeAl0.5Si0.5/MgO/Ta structured films

Cited by 5 publications

References 19 publications

Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe2CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe2CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Perpendicular magnetic anisotropy of Pd/Co2MnSi/MgAl2O4/Pd structure films

Interface alloying of ultra-thin sputter-deposited Co2MnSi films as a source of perpendicular magnetic anisotropy

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Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe₂CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe₂CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization

Perpendicular magnetic anisotropy of Pd/Co₂MnSi/MgAl₂O₄/Pd structure films