We report a large tunneling anisotropic magnetoresistance (TAMR) in (Ga,Mn)As lateral nanoconstrictions. Unlike previously reported tunneling magnetoresistance effects in nanocontacts, the TAMR does not require noncollinear magnetization on either side of the constriction. The nature of the effect is established by a direct comparison of its phenomenology with that of normal anisotropic magnetoresistance (AMR) measured in the same lateral geometry. The direct link we establish between the TAMR and AMR indicates that TAMR may be observable in other materials showing room temperature AMR and demonstrates that the physics of nanoconstriction magnetoresistive devices can be much richer than previously thought.
The dependence of roughness of poly͑methylmethacrylate͒ resist features on developer composition and development time, using methyl isobutyl ketone:propanol ͑MIBK:IPA͒ developer with and without ultrasonic assistance, is investigated using atomic force microscopy. It is found that the roughness decreases with increasing proportion of MIBK in the developer and that for a weak developer ͑1:4 MIBK:IPA at 25°C͒, the roughness increases with development time. Ultrasonically assisted development is also found to reduce the roughness when using a weak developer, but has no significant effect with a strong developer ͑1:1 MIBK:IPA͒, or when using 3:7 water:IPA. We propose that the origin of the roughness is due to phase separation during development in weak solvents and for long development times.
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