Correlation of surface roughness with edge roughness in PMMA resist

Yasin, Shazia; Khalid, M. N.; Hasko, D. G.; Sarfraz, Sohab

doi:10.1016/j.mee.2004.12.062

Cited by 12 publications

(13 citation statements)

References 10 publications

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“…The first and well-known one is underexposure, when the clearance depth of exposed lines is insufficient to generate a grating pattern. Similar morphologies have been reported in the literature for PMMA exposed to electrons and then developed; 12,14,17,18 however, their origin has not yet been established. 3͑q͒.…”

Section: Resultssupporting

confidence: 83%

“…In our scanning electron microscopy ͑SEM͒ images, this is manifested by a low contrast as shown in Fig. Several authors 17,18 have argued that the formation of islands is common for immiscible liquids that undergo a phase separation. The other extreme regime is overexposure, when the pattern is damaged by excessive clearance of PMMA.…”

Section: Resultsmentioning

confidence: 74%

“…2,[4][5][6][7] In contrast, the detailed mechanisms of mainchain scission and fragmentation in positive-tone resists have been significantly less addressed. 12,14,17,18 Understanding of these processes is currently at a very early stage 7,19,20 and insufficient for rational optimization of sub-50-nm EBL. 3,4,[7][8][9] A model addressing the molecular-level mechanism of main-chain scission in PMMA has been reported only recently.…”

Section: Introductionmentioning

confidence: 99%

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Nanoscale resist morphologies of dense gratings using electron-beam lithography

Mohammad¹,

Dew²,

Westra³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Negative electron-beam resist hard mask ion beam etching process for the fabrication of nanoscale magnetic tunnel junctions J. Vac. Sci. Technol. B 30, 06FA01 (2012); 10.1116/1.4767123 Long nanoscale gaps on III-V substrates by electron beam lithography J. Vac. Sci. Technol. B 30, 06F305 (2012); 10.1116/1.4766881 Nanomachining and clamping point optimization of silicon carbon nitride resonators using low voltage electron beam lithography and cold development J. Vac. Sci. Technol. B 28, C6P36 (2010); 10.1116/1.3517683Accurate control of remaining resist depth for nanoscale three-dimensional structures in electron-beam grayscale lithography J.The authors report a systematic investigation, both by experiment and by numerical modeling, of resolution limits for dense nanoscale gratings fabricated in polymethylmethacrylate through low-energy electron-beam lithography ͑EBL͒ using 10 keV electrons. In particular, they have studied the resist morphologies that develop in various exposure regimes for gratings with periods from 20 to 100 nm and categorized the potential sources of resist damage in such gratings. Through comparison of their experimental and numerical results, they have elucidated the major mechanisms that limit the EBL process resolution at the stages of exposure and resist development. The authors have also suggested semiempirical criteria to predict the risk of resist damage when fabricating dense nanostructures.

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Section: Resultssupporting

confidence: 83%

Section: Resultsmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

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Nanoscale resist morphologies of dense gratings using electron-beam lithography

Mohammad¹,

Dew²,

Westra³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Observations show that surface roughness is strongly influenced by its thickness as while; the surface roughness increases with the increase of the thickness. So, to perform the lithography process, the smoothest surface has to be chosen (Yasin et al, 2005;Fonseca et al, 2004). Studies show that in the case of AFM, the possibility of directly machining a surface has been explored in two ways, i.e.…”

Section: Force Lithographymentioning

confidence: 99%

“…This capability can potentially be extended to evaluate nano-scale material response to indentation and would be ideal for evaluation of mechanical characteristic of surfaces (Burnham & Colton, 1989;Hues et al, 1994;Sadegh Hassani et al, 2008b). To apply force optimally for making nano scratches, we require to understand the underlying behavior and parameter that control it, a tip which is optimized for applying force under the experimental conditions and scanning techniques which allows one to use these tips and retain desired properties (Yasin et al, 2005;Sadegh Hassani et al, 2008a;2010). Some factors such as resolution, accuracy of alignment and reproducibility are important in this way.…”

Section: Introductionmentioning

confidence: 99%

Nanolithography Study Using Scanning Probe Microscope

Hassani¹,

Aghabozorg²

2011

Recent Advances in Nanofabrication Techniques and Applications

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Effect of e-beam dose on the fractional density of Au-catalyzed GaAs nanowire growth

2016

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Using Au/GaAs as a model system, the effect of initial catalyst conditions on nanowire densities was studied. Resulting morphologies and fractional surface densities are determined as a function of e-beam dose, dot size, and inter-dot spacing using scanning and transmission electron microscopies. The majority of resulting nanowires exhibited randomly oriented growth with the respect to the substrate and tapered with narrow tops, wider bases, and the catalyst tipscharacteristics of vapor-liquid-solid process. The base diameters of the wires are larger than the dot size, which is likely due to the non-catalyzed vapor-solid deposition along the sidewalls. The higher dose rate in pattering leads the formation of higher aspect ratio nanowires with narrower base. The fractional surface density follows the trend of clearing dose and critical dose for nanowire growth increases with decreasing catalyst pattering size and spacing. At a given dose, the fractional density increased with increasing Au dot size and with decreasing inter-dot spacing. Our results may provide new insights into the role of catalyst preparing conditions on the density controlled growth of nanowires in a single wafer.

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Correlation of surface roughness with edge roughness in PMMA resist

Cited by 12 publications

References 10 publications

Nanoscale resist morphologies of dense gratings using electron-beam lithography

Nanoscale resist morphologies of dense gratings using electron-beam lithography

Nanolithography Study Using Scanning Probe Microscope

Effect of e-beam dose on the fractional density of Au-catalyzed GaAs nanowire growth

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