“…Using state-of-the-art CA resists, even sub 30 nm resolutions were demonstrated [20][21][22][23][24]. In addition to their high sensitivity and etch resistance, CA resists have the benefit of mix & match applications, which combine EBL with photolithography: micron patterns such as the periphery and contact pads are exposed by photolithography, whereas high-resolution, submicron patterns are exposed by EBL, further increasing the throughput [17]. The drawback of such chemically amplified resists is that delay times at the order of minutes in between spin-coating, exposure, and post exposure bake lead to linewidth variations, to sensitivity losses, and, in the worst case, to T-topping effects [17,25,26].…”