UVIII for combined e-beam and optical exposure hybrid lithography

Yasin, Shazia; Khalid, M. N.; Zhang, Y.; Hasko, D. G.

doi:10.1016/j.mee.2004.12.008

Cited by 6 publications

(6 citation statements)

References 6 publications

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“…It is possible that a PEB temperature increase would have given a steeper wall angle also for the resist AZ ECI 3007. In a study of the resist UVIII by Yasin et al [7], a PEB temperature of 150 • C was reported to give better wall profiles than lower temperatures. Our results match well, and the slight discrepancy in temperature in our study and [7] may be due to hotplate calibration differences.…”

Section: Discussionmentioning

confidence: 99%

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Resist evaluation for fabrication of diffractive optical elements (DOEs) with sub-micron resolution in a MEMS production line

Herbjornrod

Schjølberg-Henriksen

Angelskår

et al. 2009

J. Micromech. Microeng.

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Diffractive optical elements (DOEs) represent small, lightweight and potentially low-cost alternatives to conventional optical components. We have evaluated photoresists and processes for fabrication of silicon micro-machined DOEs with a sub-micron pattern using an MA150 (Suss) proximity aligner. The resists HiPR 6512 (Fuji film), AZ ECI 3007 (AZ Electronics Materials), IX335 H (JSR Micro) and UVIII (Rohm and Haas) were all able to resolve the desired 0.8 µm pattern, but the wall angle obtained with IX335H was a superior 86°. Double development of the resists proved possible in a KOH-based developer but unfeasible in a TMAH-based developer. The final DOE device was successfully realized based on the optimized photolithography process.

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Section: Discussionmentioning

confidence: 99%

“…UVIII is a chemically amplified resist for DUV, consisting of a copolymer of 4-hydroxystyrene and t-butylacrylate. It has enhanced delay stability, which makes it user-friendly in R&D laboratories [7].…”

Section: Discussionmentioning

confidence: 99%

Resist evaluation for fabrication of diffractive optical elements (DOEs) with sub-micron resolution in a MEMS production line

Herbjornrod

Schjølberg-Henriksen

Angelskår

et al. 2009

J. Micromech. Microeng.

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“…To overcome this drawback, highly sensitive chemically amplified resists (CA resists) can be used. Linewidths below 100 nm at sensitivities of < 10 µC/cm 2 were demonstrated with well-established chemically amplified positive tone resists such as UVIII [16,17], AZPF514 [15], or IBM KRS-XE [18,19]. Using state-of-the-art CA resists, even sub 30 nm resolutions were demonstrated [20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

“…Using state-of-the-art CA resists, even sub 30 nm resolutions were demonstrated [20][21][22][23][24]. In addition to their high sensitivity and etch resistance, CA resists have the benefit of mix & match applications, which combine EBL with photolithography: micron patterns such as the periphery and contact pads are exposed by photolithography, whereas high-resolution, submicron patterns are exposed by EBL, further increasing the throughput [17]. The drawback of such chemically amplified resists is that delay times at the order of minutes in between spin-coating, exposure, and post exposure bake lead to linewidth variations, to sensitivity losses, and, in the worst case, to T-topping effects [17,25,26].…”

Section: Introductionmentioning

confidence: 99%

Highly robust electron beam lithography lift-off process using chemically amplified positive tone resist and PEDOT:PSS as a protective coating

Kofler¹,

Schmoltner²,

Klug³

et al. 2014

J. Micromech. Microeng.

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Highly sensitive chemically amplified resists are well suited for large-area, high-resolution rapid prototyping by electron beam lithography. The major drawback of these resists is their susceptibility to T-topping effects, sensitivity losses, and linewidth variations caused by delay times between individual process steps. Hence, they require a very tight process control, which hinders their potentially wide application in R&D. We demonstrate a highly robust electron beam lithography lift-off process using a chemically amplified positive tone 40XT photoresist in combination with an acidic conducting polymer (PEDOT:PSS) as a protective top-coating. Even extended delay times of 24 h did not lead to any sensitivity losses or linewidth variations. Moreover, an overall high performance with a resolution of 80 nm (after lift-off) and a high sensitivity (<10 µC/cm2) comparable to other standard chemically amplified resists was achieved. The development characteristics of this resist-layer system revealed new insights into the immanent trade-off between resolution and process stability.

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“…One is the so-called bottom-up technique whereby chemical layers are deposited on to a substrate to modify the surface wetting properties, making it possible to guide aqueous fluids across the surface. 6 It is both light and electron sensitive and has received extensive characterization at low 6,7 and high 5 electron dose. 4 The bottom-up method requires a relatively simple single-step fabrication process, but exposed fluids on the surface of the chip can easily evaporate off.…”

Section: Introductionmentioning

confidence: 99%