Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra
Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donoracceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis.
The drive to faster data transmission speeds, more integration, smaller form factors and higher signal integrity all favor the eventual adoption of optical transmission schemes in data buses. This contribution will discuss emerging technologies from Shipley Company, LLC 1 to address the needs of optoelectronic signal transmission. In particular, the discussion will focus on materials and processes that are in development to function within existing printed circuit board (PCB) & microelectronic manufacturing schemes. One topic that is described in detail involves photopatternable, polymer interconnect technologies. Another topic describes progress in Shipley's ability to integrate these interconnects into prototypical PCB processes. Progress in connecting the planar waveguides to connectorization schemes will be also be described. Other topics include lithographic and patterning metrics, optical characteristics of interconnects, morphological features of patterned waveguides, integration and coupling considerations, thermal and mechanical properties of the system and general assembly processes.
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