The n-type and p-type a-GaN films were successfully grown on a r-sapphire substrate, according to X-ray diffractometer and SEM results parameters measurement. The growth rate versus the growth temperature was investigated. The holes concentration (8x1017 cm−3) was achieved by the Cp2Mg flow optimization and the parameters of thermal annealing in nitrogen. The GaN film growth rate dependence versus temperature at a constant hydrogen flow through a TEG source was investigated. The results indicate that defects density is reduced upto 104 cm−2, the surface morphology uniformity was improved. During growth the influence from V/III flows ratio was detected.
The AlGaInAs structure was successfully grown on the InP substrate by MOCVD method. The active region was studied by Auger spectroscopy. The thicknesses and compositions of the quantum wells did not coincide with the theoretical ones. The mathematical model which correlate with investigation results is proposed.
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