MOCVD growth GaN on sapphire

Abstract

The n-type and p-type a-GaN films were successfully grown on a r-sapphire substrate, according to X-ray diffractometer and SEM results parameters measurement. The growth rate versus the growth temperature was investigated. The holes concentration (8x1017 cm−3) was achieved by the Cp2Mg flow optimization and the parameters of thermal annealing in nitrogen. The GaN film growth rate dependence versus temperature at a constant hydrogen flow through a TEG source was investigated. The results indicate that defects density is reduced upto 104 cm−2, the surface morphology uniformity was improved. During growth the influence from V/III flows ratio was detected.

Hidróxido De Amonio Como Precursor De Nitrógeno Para El Crecimiento De Nitruro De Galio Por El Método De Crecimiento Por Capas Atómicas

“…En la figura 7 se presenta el patrón de difracción de Rayos X para la película obtenida. Para la película de GaN crecida a 325°C se tiene un pico principal en 2Θ alrededor de 35.5°, que se atribuye a α-GaN (0002), además se distinguen 2 señales secundarias en 34.2 y 39.8°, mismas que se relacionan con GaN y se encuentran reportadas en la literatura desde los primeros estudios del material (Yu G.,1997) hasta publicaciones de la actualidad (Abdullaev O. et al,2019).…”

Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl3 gas supply system

“…Metal-organic vapor phase epitaxy [8][9][10][11][12][13][14][15][16] is widely used for fabrication of GaN-based devices such as light-emitting diodes, laser diodes and high-electron-mobility transistors. It has rarely been used for fabrication of freestanding GaN substrates because of the high cost of metal-organic Ga compounds and the low growth rate of just a few micrometers per hour.…”