The electrical switching behavior of GeTe-based phase change memory devices is characterized by time resolved experiments. SET pulses with a duration of less than 16 ns are shown to crystallize the material. Depending on the resistance of the RESET state, the minimum SET pulse duration can even be reduced down to 1 ns. This finding is attributed to the increasing impact of crystal growth upon decreasing switchable volume. Using GeTe or materials with similar crystal growth velocities, hence promises nonvolatile phase change memories with dynamic random access memorylike switching speeds.

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We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.

Solid state memories play an important role for the electronic systems used in today's information society. The classical approach of charge storage is expected to reach its physical scaling limits very soon. New storage effects are therefore receiving significant interest from industry and academia. In the paper we summarize recent results on resistive switching effects in inorganic materials obtained in the research groups of the authors. We discuss the implications of these results for the suitability of the investigated material systems as well as for the direction of further research.