Carbon-based resistive memory

Abstract

We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.

Resistance switching at the nanometre scale in amorphous carbon

“…This means of changing the electrical resistance of a-C is particularly interesting for memory applications. Recently, Kreupl et al [16] built a simplistic memory device with a-C and were able to vary the resistance by applying current pulses. The device structure also allowed them to reversibly switch the material between a high and a low resistance state.…”

Resistive switching of carbon-based RRAM with CNT electrodes for ultra-dense memory

“…Unipolar switching has been reported for a-C layer with an inert metal electrode, such as, W and Cr [1,3]. In our work, we used Pd as top metal electrode, which typically forms good electrical contact to the CNT.…”

“…The a-C has been shown to exhibit resistive switching behavior for nonvolatile memory application [1][2][3][4][5]. Different switching mechanisms for the a-C have been reported, including thermo-chemical sp 2 carbon chain forming/rupture [1][2][3] electrochemical metallization [4] and valence change [5].…”

Non-Volatile Resistive Switching in Graphene Oxide Thin Films

“…14(b), the desorption and absorption of the oxygen-related functional groups on the GO sheets correspond to the low and high resistive states, respectively. Insulating carbon can be switched to conductive sp 2 -rich carbon and conductive carbon can be switched to sp 3 -rich carbon by applying appropriate electric fields (Kreupl et al, 2008). (c) Schematic of the desorption and aborption of hydroxyl or similar groups on the GO sheets (Echtermeyer et al, 2008).…”