Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm

Kund, M.; Beitel, G.; Pinnow, C. U.; Rohr, T.; Schumann, J.; Symanczyk, R.; Ufert, K.‐D.; Müller, Georg

doi:10.1109/iedm.2005.1609463

Cited by 233 publications

(222 citation statements)

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“…1,2 The ECM cell consists of an insulator layer sandwiched between two electrodes, in which one is made from an electrochemically active electrode (AE) metal, such as Ag or Cu, and the other is a counter electrode (CE), such as Pt, Ir, W, or Ag. 3,4 Till now, a large number of ECM cells have been reported, employing various insulating materials such as chalcogenides, [5][6][7][8][9][10][11][12][13] oxides, [14][15][16][17][18][19][20][21][22][23][24] amorphous Si (Refs. 25 and 26) and C, [27][28][29][30] and organic materials.…”

Section: Introductionmentioning

confidence: 99%

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Zhuge

et al. 2015

AIP Advances

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It has been reported that in chalcogenide-based electrochemical metallization (ECM) memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S), the metal filament grows from the cathode (e.g., Pt and W) towards the anode (e.g., Cu and Ag), whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2). The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

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Section: Introductionmentioning

confidence: 99%

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Zhuge

et al. 2015

AIP Advances

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“…If mobile ions such as Ag [83] or Cu [84,85,86,87,88] are diffused into solid electrolyte, the movement of these ions can be controlled by electric field made by two electrodes sandwiching the electrolyte. There are a lot of papers on ReRAMs using many kinds of solid electrolyte in which a conductive filament is formed or ruptured under the control of electric field.…”

Section: Reram Using Solid Electrolytementioning

confidence: 99%

Overview of emerging semiconductor non-volatile memories

Fujisaki

2012

IEICE Electron. Express

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Abstract:In this article, emerging new semiconductor non-volatile memories are reviewed. We are reaching the integration limit of Flash memories and new types of memories replacing Flash have been actively proposed. Each type of memory is briefly introduced and the possibility of replacing Flash is discussed. FeRAMs, MRAMs, and PCRAMs are already in production and the physics behind the operations and reliabilities are well understood. ReRAMs are now approaching to practical use. However, the operation mechanisms of the other memories have not been understood perfectly. Therefore, it is not fruitful to compare the superiority of each technology at this moment because some innovative idea might enhance a specific technology that happened from time to time.

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“…With the electrochemical effect, the formation of conductive filaments is due to redox reactions in solid state electrolytes [29,30,36]. A thin solid electrolyte layer is sandwiched between an oxidizable anode (Ag or Cu) and an inert cathode (Pt or W).…”

Section: Formation and Rupture Of Conductive Filamentsmentioning

confidence: 99%

“…It has been reported that certain I-V relationships can be used to identify the underlying resistive-switching mechanisms [27][28][29][30][31][32][33], which can be mainly divided into: formation and rupture of conductive filaments, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission.…”

Section: Resistive-switching Mechanismsmentioning

confidence: 99%

An overview of resistive random access memory devices

Long

Liu

et al. 2011

Chin. Sci. Bull.

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With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.

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Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm

Cited by 233 publications

References 1 publication

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Overview of emerging semiconductor non-volatile memories

An overview of resistive random access memory devices

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