Mahadevaiyer Krishnan received his Ph.D. degree in Physical Chemistry/ Electrochemistry from Georgetown University under the direction of Prof. Robert de Levie. He was a postdoctoral fellow under Prof. A. J. Bard in the University of Texas at Austin. He joined the IBM T. J. Watson Research Center at Yorktown Heights in 1984 as a research scientist. Krishnan's research interests include interfacial electrochemistry, colloid and surface science, and semiconductor process development. He has been leading research and development as well as manufacturing implementation of CMP slurries and processes in IBM since 1994.

No abstract

No abstract

No abstract

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm−2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.