Quantum mechanical tunneling of electrical conduction in thin insulating film (SiOl) from the strongly inverted Si surface has been studied. A simple method of calculating the penetration probability of the energetic electrons, and the tunneling current is proposed. These electrons are from a series of quantized energy levels in the potential well (assuming triangular in nature), formed by the large bending of the silicon conduction band at the surface. Due to the down scaling of the device dimension, the field across the oxide becomes high enough, and causes a large band bending in the form of a narrow potential well. Gate oxide thickness and gate voltage dependence of the tunneling current is analyzed using the tunneling current model. Thls study may be helpful to predict the oxide breakdown process.
We have measured impact ionization rates in Ga1−xAlxSb at x=0 and 0.08. For these Al contents, the ratio values of the spin-orbit splitting energy Δ to the energy gap Eg are, respectively, greater and lower than unity. We have determined that the ratio of the ionization coefficients kp/kn is greater than unity for both compositions and that it is much lower (kp/kn≊2) than the value (≳10) determined on our layers for x=0.04. Multiplication noise measurements confirm these results. The comparison to other published data show that the ionization in these antimonide compounds is not yet elucidated.
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