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Large area, crack-free GaInP / GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/ Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.

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Large area, crack-free GaInP / GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/ Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.

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