2001
DOI: 10.1016/s0927-0248(00)00207-5
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Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells

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Cited by 92 publications
(48 citation statements)
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“…Although the fabrication processes have not been well disclosed, the photovoltaic layers are attached to metal or polymer supporting films and the parent substrates for the epitaxial growth are removed somehow. For further improvement of the cell efficiency, cells with more junctions are being proposed such as an InGaP/GaAs/InGaAsN/Ge four-junction (4J) structure [34], which will be also discussed in the following section. Recently an (Al)InGaP/InGaP/Al(In)GaAs/(In)GaAs/InGaAsN/Ge 6J cell has been demonstrated [35].…”
Section: Developments Of Multijunction Iii-v Solar Cellsmentioning
confidence: 99%
“…Although the fabrication processes have not been well disclosed, the photovoltaic layers are attached to metal or polymer supporting films and the parent substrates for the epitaxial growth are removed somehow. For further improvement of the cell efficiency, cells with more junctions are being proposed such as an InGaP/GaAs/InGaAsN/Ge four-junction (4J) structure [34], which will be also discussed in the following section. Recently an (Al)InGaP/InGaP/Al(In)GaAs/(In)GaAs/InGaAsN/Ge 6J cell has been demonstrated [35].…”
Section: Developments Of Multijunction Iii-v Solar Cellsmentioning
confidence: 99%
“…However, the compound GaAs is stable and not toxic [70]- [72]. GaAs cells possess band gap energy of 1.43 -1.7 eV so they can absorb photons with higher energy levels than crystalline silicon PV cells [56], [57], [72]. In addition, GaAs has high absorptivity.…”
Section: Gallium Arsenide (Gaas) Pv Cellmentioning
confidence: 99%
“…In addition to possessing a PCE of 29% which is the highest for any single junction PV cell [55], [73], GaAs cells are heat and radiation resistant. They possess a temperature coefficient p Max of 0% which means no performance loss with respect to temperature rise from STC [56], [57]. However, GaAs cells fail to dominate the market with just about 1% of the market share as seen in Fig.…”
Section: Gallium Arsenide (Gaas) Pv Cellmentioning
confidence: 99%
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“…The binary compound InP is also a natural substrate widely used for both optoelectronic and high speed device applications. In the last years, ternary Al x In 1−x P alloys is the alloy of two binaries AlP and InP, has been studied by several theoretical [2][3][4] and experimental [5][6][7] research group because of its potential for the applications such as GaInP/GaAs solar cell [8,9] and visible lasers and modulators [10]. The aim of this work is to investigate the structural properties, such as the equilibrium lattice constants (a 0 ) and bulk modulus (B 0 ), and electronic properties of binary compounds, AlP and InP, and ternary alloys Al x In 1−x P by employing the density functional theory.…”
Section: Introductionmentioning
confidence: 99%