Heavily carbon-doped GaAs was obtained by low-pressure metalorganic chemical vapor deposition by using trimethylgallium and arsine with a low V/III ratio. The hole concentration became as high as 2×1019 cm−3 without using intentional doping source gases when the V/III ratio was decreased to 2.4. The hole concentration coincided with the carbon concentration measured by secondary-ion mass spectroscopy. The epilayer surface tended to be rough when the V/III ratio was decreased below 10. However, when the V/III ratio was lowered to 2.4, the epilayer surface became completely mirror-like.
Carrier concentration and mobility for the MOCVD-grown high-purity GaInAs epilayers on InP were investigated. A thin conductive layer with a sheet carrier concentration of 3.8×1011 cm-2 was considered to exist at the GaInAs and InP heterointerface, because of the GaInAs epilayer thickness dependence of sheet carrier concentration measured by the Hall measurements for GaInAs epilayers on InP. The Hall measurements for the bare GaInAs epilayers, which were prepared by removing the InP, were considered preferable for obtaining the carrier concentration of the high-purity GaInAs epilayers. From the data obtained for the bare GaInAs epilayers, triethylgallium was found to be a more preferable gallium source than trimethylgallium to grow high-purity GaInAs.
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