Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio

Abstract

Heavily carbon-doped GaAs was obtained by low-pressure metalorganic chemical vapor deposition by using trimethylgallium and arsine with a low V/III ratio. The hole concentration became as high as 2×1019 cm−3 without using intentional doping source gases when the V/III ratio was decreased to 2.4. The hole concentration coincided with the carbon concentration measured by secondary-ion mass spectroscopy. The epilayer surface tended to be rough when the V/III ratio was decreased below 10. However, when the V/III ratio was lowered to 2.4, the epilayer surface became completely mirror-like.

Evaluation of incorporation efficiency of group V source gases in metal organic chemical vapor deposition of GaInNAs for high quality 1.21μm quantum-well ridge wave guide lasers

“…A reported relation between V/III ratio and carrier concentration for GaAs grown with TMG and arsine is also depicted in Fig. 1 [6]. The lines in Fig.…”

High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers

“…C-doped AlGaAs/GaAs have been obtained by metal-organic chemical vapor deposition (MOCVD) using extrinsic doping precursors such as carbon tetrachloride (CCl 4 ) [3,5] and carbon tetrabromide (CBr 4 ) [6,7]. C doping can also be realized intrinsically using auto-doping method [8][9][10]. For auto-doping, it is necessary to use very low V/III ratio and low temperature to increase the doping level, which increases as well the incorporation of unwanted oxygen impurities or could lead to morphology problems.…”

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

“…The incorporation of C atoms has been obtained in different way. Intrinsic C doping was studied by using arsine or trimethylarsenic and trimethylgallium or triethylgallium [5][6][7]8]. With this method, however, the V/III ratio could not be controlled independently from the dopant source flow.…”