Triple-junction GaInP/GaAs/GaInNAs solar cells with conversion efficiency of~29% at AM0 are demonstrated using a combination of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The bottom junction made of GaInNAs was first grown on a GaAs substrate by MBE and then transferred to an MOCVD system for subsequent overgrowth of the two top junctions. The process produced repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency tandem solar cells with three or more junctions.

In the present paper, we describe the results of electrical characterization of AZUR SPACE triple-junction solar cells at a sun light intensity of 3.7% AM0 and temperatures down to -150°C. At these conditions, which are relevant for the anticipated ESA JUICE mission, the cell efficiency reaches 33.5 % at BOL. Special attention has been paid to the establishing of an in-situ characterization procedure for defining EOL cell characteristics after electron and proton irradiation at low temperature low intensity condition. It was shown that solar cells irradiated at low temperature exhibit a strong recovery effect within short time after stopping the irradiation whereas the absolute value of the recovery depends on the irradiation fluence and particle type. Further on, it was demonstrated that the degradation of the maximum power, Pmp, is much stronger than the degradation of Isc and Voc values. Experimentally defined remaining factors for electron and proton irradiation and the quantification of the observed recovery effects allow a realistic prediction of the solar cell performance at JUICE mission conditions and are essential for the planned solar cell qualification activities.

-A major limitation in current liquid phase crystallized (LPC) silicon thin-film record solar cells are optical losses caused by their planar glass-silicon interface. In this study, silicon is grown on nanoimprinted periodically as well as on randomly textured glass substrates and successfully implemented into state-of-the-art LPC silicon thin-film solar cell stacks. By systematically varying every layer the whole sample stack is optimized regarding its anti-reflection ability. Compared to an optimized planar reference device, a reduction of reflection losses by -3.5% (absolute) on the random and by -9.4% (absolute) on the periodic texture has been achieved in the wavelength range of interest.

The most common multi-junction solar cell arrangement employs the InGaP/InGaAs/Ge configuration, which is usually exploited for high-efficiency space applications. We here test the reliability of a triple-junction device with an innovative low-thickness and flexible configuration: this is investigation is aimed at providing its main macroscopic features which must be taken into account for their applications. Notably, the specific optical and electrical features and the performance variation of these thin solar cells are systematically analyzed, both in begin-of-life (BOL) configuration and after irradiation (end-of-life, EOL) by either electrons or protons. Measurements of I -V curves, with correlated parameters, and of spectral responses (external quantum efficiency) are accomplished on several BOL and EOL samples: this allows to describe the inhomogeneous damage of the subjunctions and to follow the evolution of the solar cell physical quantities as a function of the kind and the amount of irradiation. Finally, photoluminescence emission spectra are measured, pointing out the effect of particle bombardment on luminescent features. Our results show that these innovative solar devices allow for the combination of high specific power, mechanical flexibility, high performance, and strong resistance to particle irradiation, making them an excellent option for space applications.

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